BLM6G22-30 NXP Semiconductors, BLM6G22-30 Datasheet - Page 2

30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 2100 MHz to 2200 MHz

BLM6G22-30

Manufacturer Part Number
BLM6G22-30
Description
30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 2100 MHz to 2200 MHz
Manufacturer
NXP Semiconductors
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BLM6G22-30G
Manufacturer:
ST
Quantity:
23 000
Part Number:
BLM6G22-30G
Manufacturer:
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Quantity:
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NXP Semiconductors
2. Pinning information
3. Ordering information
BLM6G22-30_BLM6G22-30G
Product data sheet
2.1 Pinning
2.2 Pin description
Table 2.
Table 3.
Symbol
GND
V
n.c.
RF_INPUT
V
V
RF_OUT/V
RF_GND
Type number
BLM6G22-30
BLM6G22-30G
Fig 1.
DS1
GS1
GS2
Transparent top view.
Pin configuration
DS2
Pin description
Ordering information
All information provided in this document is subject to legal disclaimers.
RF_INPUT
Package
Name
HSOP16F plastic, heatsink small outline package; 16 leads (flat) SOT834-1
HSOP16
Pin
1, 11, 12, 16
2
3, 4, 5, 7, 8, 13, 15
6
9
10
14
flange
V
V
V
GND
GND
DS1
GS1
GS2
n.c.
n.c.
n.c.
n.c.
n.c.
Rev. 4 — 7 March 2011
10
11
1
2
3
4
5
6
7
8
9
BLM6G22-30; BLM6G22-30G
Description
plastic, heatsink small outline package; 16 leads
BLM6G22-30G
BLM6G22-30
Description
ground
first stage drain-source voltage
not connected
RF input
first stage gate-source voltage
second stage gate-source voltage
RF output or second stage drain-source voltage
RF ground
W-CDMA 2100 MHz to 2200 MHz power MMIC
001aae321
16
15
14
13
12
GND
n.c.
RF_OUTPUT/V
n.c.
GND
DS2
© NXP B.V. 2011. All rights reserved.
Version
SOT822-1
2 of 14

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