BLM6G22-30 NXP Semiconductors, BLM6G22-30 Datasheet - Page 6

30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 2100 MHz to 2200 MHz

BLM6G22-30

Manufacturer Part Number
BLM6G22-30
Description
30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 2100 MHz to 2200 MHz
Manufacturer
NXP Semiconductors
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
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Manufacturer:
ST
Quantity:
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Part Number:
BLM6G22-30G
Manufacturer:
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NXP Semiconductors
BLM6G22-30_BLM6G22-30G
Product data sheet
Fig 7.
Fig 9.
(dB)
G
(1) V
(2) V
(3) V
(1) T
(2) T
(3) T
p
32
30
28
26
24
0
f = 2140 MHz; I
One-tone CW power gain as function of output
power and drain-source voltage; typical value
Test signal: IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 to 13). PAR = 9.7 dB at 0.01 % probability on
the CCDF.
Single-carrier peak output power as function of frequency and temperature; typical values
case
case
case
DS
DS
DS
= 24 V
= 28 V
= 32 V
= −30 °C
= 25 °C
= 85 °C
10
Dq1
= 270 mA; I
20
(1)
P
(W)
L(M)
Dq2
35
31
27
23
19
15
(2)
30
2050
= 280 mA.
All information provided in this document is subject to legal disclaimers.
P
001aah626
L
(W)
(3)
40
2100
Rev. 4 — 7 March 2011
BLM6G22-30; BLM6G22-30G
2150
Fig 8.
(dBc)
IMD
−20
−30
−40
−50
−60
−70
−80
−90
2200
W-CDMA 2100 MHz to 2200 MHz power MMIC
10
I
f
Two-tone CW intermodulation distortion as
function of peak envelope load power; typical
value
−1
Dq1
2
(1)
(2)
(3)
f (MHz)
= 2140.1 MHz.
001aah628
= 270 mA; I
2250
1
Dq2
= 280 mA; f
10
1
P
= 2140 MHz;
L(PEP)
© NXP B.V. 2011. All rights reserved.
IMD3
IMD5
IMD7
001aah627
(W)
10
2
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