BLS7G2729LS-350P NXP Semiconductors, BLS7G2729LS-350P Datasheet

350 W LDMOS power transistor intended for radar applications in the 2

BLS7G2729LS-350P

Manufacturer Part Number
BLS7G2729LS-350P
Description
350 W LDMOS power transistor intended for radar applications in the 2
Manufacturer
NXP Semiconductors
Datasheet

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Part Number:
BLS7G2729LS-350P
Manufacturer:
NXP
Quantity:
5 000
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
350 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 2.9 GHz
range.
Table 1.
Typical RF performance at T
production test circuit.
Mode of operation
pulsed RF
BLS7G2729L-350P;
BLS7G2729LS-350P
LDMOS S-band radar power transistor
Rev. 1 — 24 May 2011
Typical pulsed RF performance at a frequency of 2.7 GHz to 2.9 GHz, a supply voltage
of 32 V, an I
Easy power control
Integrated ESD protection
High flexibility with respect to pulse formats
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for S-band operation (2.7 GHz to 2.9 GHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
S-band power amplifiers for radar applications in the 2.7 GHz to 2.9 GHz frequency
range
Output power = 350 W
Power gain = 13.5 dB
Efficiency = 50 %
Typical performance
Dq
of 200 mA, a t
f
(GHz)
2.7 to 2.9
case
= 25
p
of 300 μs with δ of 10 %:
°
C; t
V
(V)
32
DS
p
= 300
P
(W)
350
μ
L
s;
δ
= 10 %; I
G
(dB)
13.5
Dq
p
= 200 mA; in a class-AB
η
(%)
50
D
Objective data sheet
t
(ns)
20
r
t
(ns)
6
f

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BLS7G2729LS-350P Summary of contents

Page 1

... BLS7G2729L-350P; BLS7G2729LS-350P LDMOS S-band radar power transistor Rev. 1 — 24 May 2011 1. Product profile 1.1 General description 350 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 2.9 GHz range. Table 1. Typical RF performance at T production test circuit. Mode of operation pulsed RF 1.2 Features and benefits Typical pulsed RF performance at a frequency of 2.7 GHz to 2.9 GHz, a supply voltage ...

Page 2

... BLS7G2729L-350P (SOT539A BLS7G2729LS-350P (SOT539B [1] Connected to flange. 3. Ordering information Table 3. Type number BLS7G2729L-350P BLS7G2729LS-350P - 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg T j BLS7G2729L-350P_LS-350P Objective data sheet Pinning ...

Page 3

... NXP Semiconductors 5. Thermal characteristics Table 5. Symbol Parameter Z th(j-mb) 6. Characteristics Table 6. ° Symbol Parameter V (BR)DSS V GS(th) I DSS I DSX I GSS DS(on) 7. Application information Table 7. Mode of operation: pulsed RF case Symbol L(1dB) η droop(pulse BLS7G2729L-350P_LS-350P ...

Page 4

... NXP Semiconductors Table 8. f GHz 2.7 2.8 2.9 Fig 1. 7.1 Ruggedness in class-AB operation The BLS7G2729L-350P and BLS7G2729LS-350P are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions: V BLS7G2729L-350P_LS-350P Objective data sheet Typical impedance Z S Ω <tbd> <tbd> <tbd> gate Z S Definition of transistor impedance = 32 V ...

Page 5

... NXP Semiconductors 8. Package outline Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads DIMENSIONS (millimetre dimensions are derived from the original inch dimensions UNIT 4.7 11.81 0.18 31.55 31.52 mm 4.2 11.56 30.94 30.96 0.10 0.465 0.185 0.007 1.242 1.241 inches 0.455 0.165 0.004 1.218 1.219 Note 1. millimeter dimensions are derived from the original inch dimensions. ...

Page 6

... NXP Semiconductors Earless flanged balanced LDMOST ceramic package; 4 leads Dimensions (1) Unit max 4.7 11.81 0.18 31.55 mm nom min 4.2 11.56 0.10 30.94 max 0.185 0.465 0.007 1.242 nom mm min 0.165 0.455 0.004 1.218 Note 1. millimeter dimensions are derived from the original inch dimensions. Outline version ...

Page 7

... NXP Semiconductors 9. Handling information CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 10. Abbreviations Table 9. Acronym LDMOS LDMOST RF S-band VSWR 11. Revision history Table 10. ...

Page 8

... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or ...

Page 9

... Objective data sheet NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...

Page 10

... NXP Semiconductors 14. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . 3 6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 Application information 7.1 Ruggedness in class-AB operation . . . . . . . . . 4 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 5 9 Handling information Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 7 12 Legal information ...

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