BLS7G2729L-350P NXP Semiconductors, BLS7G2729L-350P Datasheet
BLS7G2729L-350P
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BLS7G2729L-350P Summary of contents
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... BLS7G2729L-350P; BLS7G2729LS-350P LDMOS S-band radar power transistor Rev. 1 — 24 May 2011 1. Product profile 1.1 General description 350 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 2.9 GHz range. Table 1. Typical RF performance at T production test circuit. Mode of operation pulsed RF 1.2 Features and benefits Typical pulsed RF performance at a frequency of 2.7 GHz to 2.9 GHz, a supply voltage ...
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... NXP Semiconductors 2. Pinning information Table 2. Pin BLS7G2729L-350P (SOT539A BLS7G2729LS-350P (SOT539B [1] Connected to flange. 3. Ordering information Table 3. Type number BLS7G2729L-350P BLS7G2729LS-350P - 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol ...
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... L(1dB) η droop(pulse BLS7G2729L-350P_LS-350P Objective data sheet Thermal characteristics transient thermal impedance from junction to mounting base Characteristics C unless otherwise specified. drain-source breakdown voltage gate-source threshold voltage drain leakage current drain cut-off current gate leakage current forward transconductance ...
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... NXP Semiconductors Table 8. f GHz 2.7 2.8 2.9 Fig 1. 7.1 Ruggedness in class-AB operation The BLS7G2729L-350P and BLS7G2729LS-350P are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions: V BLS7G2729L-350P_LS-350P Objective data sheet Typical impedance Z S Ω <tbd> <tbd> <tbd> gate Z S Definition of transistor impedance = 32 V ...
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... Note 1. millimeter dimensions are derived from the original inch dimensions. 2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw. OUTLINE VERSION IEC SOT539A Fig 2. Package outline SOT539A BLS7G2729L-350P_LS-350P Objective data sheet ...
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... Note 1. millimeter dimensions are derived from the original inch dimensions. Outline version IEC SOT539B Fig 3. Package outline SOT539B BLS7G2729L-350P_LS-350P Objective data sheet scale ...
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... Table 9. Acronym LDMOS LDMOST RF S-band VSWR 11. Revision history Table 10. Revision history Document ID BLS7G2729L-350P_LS-350P v.1 BLS7G2729L-350P_LS-350P Objective data sheet Abbreviations Description Laterally Diffused Metal-Oxide Semiconductor Laterally Diffused Metal-Oxide Semiconductor Transistor Radio Frequency Short wave Band Voltage Standing-Wave Ratio Release date Data sheet status ...
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... Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or BLS7G2729L-350P_LS-350P Objective data sheet [3] Definition This document contains data from the objective specification for product development. ...
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... Contact information For more information, please visit: For sales office addresses, please send an email to: BLS7G2729L-350P_LS-350P Objective data sheet NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BLS7G2729L-350P_LS-350P All rights reserved. Date of release: 24 May 2011 ...