BLS7G2729L-350P NXP Semiconductors, BLS7G2729L-350P Datasheet - Page 7

• Manufacturer Part Number: BLS7G2729L-350P
• Description: 350 W LDMOS power transistor intended for radar applications in the 2
• Manufacturer: NXP Semiconductors

NXP Semiconductors
9. Handling information
10. Abbreviations
11. Revision history
Table 10.
BLS7G2729L-350P_LS-350P
Objective data sheet
CAUTION
Document ID
BLS7G2729L-350P_LS-350P v.1
Revision history
Table 9.
Acronym
LDMOS
LDMOST
RF
S-band
VSWR
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
Abbreviations
20110524
Release date
All information provided in this document is subject to legal disclaimers.
Description
Laterally Diffused Metal-Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Radio Frequency
Short wave Band
Voltage Standing-Wave Ratio
Rev. 1 — 24 May 2011
Data sheet status
Objective data sheet
BLS7G2729L(S)-350P
LDMOS S-band radar power transistor
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Change notice
© NXP B.V. 2011. All rights reserved.
Supersedes
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