BF1105WR NXP Semiconductors, BF1105WR Datasheet - Page 6

• Manufacturer Part Number: BF1105WR
• Description: Enhancement type N-channel Field-Effect Transistor
• Manufacturer: NXP Semiconductors

NXP Semiconductors
1997 Dec 02
handbook, halfpage
handbook, halfpage
N-channel dual-gate MOS-FETs
V
f
unw
V
T
(dBμV)
Fig.11 Unwanted voltage for 1% cross-modulation
DS
V unw
Fig.9
j
G2-S
(mA)
= 25 C.
I D
= 60 MHz; T
= 5 V; V
110
100
16
12
90
80
= 4 V.
8
4
0
0
0
as a function of gain reduction;
typical values (see Fig.18).
Drain current as a function of drain-source
voltage; typical values.
G2nom
amb
= 4 V; I
= 25 C.
2
20
Dnom
= I
self bias
4
; f
w
40
gain reduction (dB)
= 50 MHz;
6
V DS (V)
fMGM248
MGM250
60
8
6
handbook, halfpage
V
Fig.10 Drain current as a function of gate 1 current;
DS
(mA)
I D
= 5 V; V
16
12
8
4
0
BF1105; BF1105R; BF1105WR
−8
typical values.
G2-S
= 4 V; T
−6
j
= 25 C.
−4
Product specification
−2
I G1 (μA)
MGM249
0