BF1105WR NXP Semiconductors, BF1105WR Datasheet - Page 7

• Manufacturer Part Number: BF1105WR
• Description: Enhancement type N-channel Field-Effect Transistor
• Manufacturer: NXP Semiconductors

NXP Semiconductors
1997 Dec 02
handbook, halfpage
handbook, halfpage
N-channel dual-gate MOS-FETs
V
I
Fig.12 Input admittance as a function of frequency;
V
I
D
D
Fig.14 Forward transfer admittance and phase as
DS
DS
(mS)
(mS)
|y fs |
= 12 mA; T
= 12 mA; T
y is
10
10
10
10
= 5 V; V
= 5 V; V
10
10
−1
−2
1
2
1
2
10
10
typical values.
a function of frequency; typical values.
G2-S
G2-S
amb
amb
= 4 V.
= 4 V.
= 25 C.
= 25 C.
10
10
g is
2
b is
2
|y fs |
ϕ fs
f (MHz)
f (MHz)
MGM253
MGM251
10
10
3
−10
−10
−1
3
(deg)
ϕ fs
2
7
handbook, halfpage
handbook, halfpage
V
I
V
I
D
Fig.13 Reverse transfer admittance and phase as
D
(mS)
|y rs |
(μS)
DS
DS
y os
= 12 mA; T
= 12 mA; T
10
10
10
10
= 5 V; V
= 5 V; V
10
10
−1
−2
Fig.15 Output admittance as a function of
1
3
2
1
BF1105; BF1105R; BF1105WR
10
10
a function of frequency; typical values.
G2-S
G2-S
amb
amb
frequency; typical values.
= 4 V.
= 4 V.
= 25 C.
= 25 C.
10
10
2
2
|y rs |
ϕ rs
g os
b os
f (MHz)
f (MHz)
Product specification
MGM252
MGM254
10
10
3
−10
−10
−10
−1
3
(deg)
ϕ rs
3
2