BF1107 NXP Semiconductors, BF1107 Datasheet - Page 4

Depletion type N-channel Field-Effect Transistor in a SOT23 package

BF1107

Manufacturer Part Number
BF1107
Description
Depletion type N-channel Field-Effect Transistor in a SOT23 package
Manufacturer
NXP Semiconductors
Datasheet

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NXP Semiconductors
BF1107_4
Product data sheet
Fig 1. On-state insertion loss as a function of
Fig 3. Input and output return loss (on-state) as a function of frequency; typical values
L
ins(on)
(dB)
(1) R
(2) R
(1) R
(2) R
0
1
2
3
4
5
V
frequency; typical values
V
10
SG
SG
S
S
S
S
= R
= R
= R
= R
= V
= V
L
L
L
L
DG
DG
= 50
= 75
= 50
= 75
= 0 V
= 0 V
10
2
(2)
(1)
RL
in
(dB)
; RL
f (MHz)
10
15
20
25
0
5
out
10
001aaf760
10
Rev. 04 — 9 January 2007
3
10
2
(1)
(2)
Fig 2. Off-state isolation as a function of frequency;
ISL
(dB)
(1) R
(2) R
f (MHz)
off
20
40
60
0
V
typical values
10
S
S
SG
= R
= R
001aaf781
= V
L
L
DG
= 50
= 75
10
= 5 V
3
N-channel single gate MOSFET
10
2
(2)
(1)
f (MHz)
© NXP B.V. 2007. All rights reserved.
001aaf780
BF1107
10
3
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