BF1211 NXP Semiconductors, BF1211 Datasheet - Page 8

• Manufacturer Part Number: BF1211
• Description: Enhancement type N-channel Field-Effect Transistor in a plastic SOT143B package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2003 Dec 16
handbook, halfpage
handbook, halfpage
N-channel dual-gate MOS-FETs
(dBμV)
V unw
Fig.13 Gate 1 current as a function of gate 2
V
see Fig.21; f = 50 MHz; f
Fig.15 Unwanted voltage for 1% cross-modulation
V
(1) V
(2) V
(μA)
DS
DS
I G1
120
110
100
= 5 V; V
= 5 V; T
50
40
30
20
10
90
80
0
GG
GG
0
0
= 5 V.
= 4.5 V.
voltage; typical values.
as a function of gain reduction; typical
values.
j
GG
= 25 C; R
= 5 V; R
10
G1
G1
(3) V
(4) V
unw
2
= 75 k (connected to V
= 75 k (connected to V
20
= 60 MHz; T
GG
GG
= 4 V.
= 3.5 V.
30
gain reduction (dB)
amb
4
= 25 C.
(1)
(2)
(3)
(4)
(5)
V G2-S (V)
(5) V
40
GG
GG
MDB837
MDB839
);
); see Fig.21.
GG
= 3 V.
50
6
8
handbook, halfpage
reduction
handbook, halfpage
gain
(dB)
V
see Fig.21; f = 50 MHz; T
Fig.14 Typical gain reduction as a function of AGC
V
see Fig.21; f = 50 MHz; T
Fig.16 Drain current as a function of gain
(mA)
DS
DS
I D
−10
−20
−30
−40
−50
−60
= 5 V; V
= 5 V; V
20
16
12
0
8
4
0
BF1211; BF1211R; BF1211WR
0
0
voltage.
reduction; typical values.
GG
GG
= 5 V; R
= 5 V; R
10
1
G1
G1
amb
amb
= 75 k (connected to V
= 75 k (connected to V
20
= 25 C.
= 25 C.
2
30
gain reduction (dB)
Product specification
3
40
V AGC (V)
GG
GG
MDB838
MDB840
);
);
50
4