BF992 NXP Semiconductors, BF992 Datasheet - Page 2

• Manufacturer Part Number: BF992
• Description: Depletion type Field-Effect Transistor in a plastic SOT143 microminiature package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
APPLICATIONS
DESCRIPTION
Depletion type field-effect transistor in a plastic
micro-miniature SOT143B package with source and
substrate interconnected.
The transistor is protected against excessive input voltage
surges by integrated back-to-back diodes between gates
and source.
QUICK REFERENCE DATA
V
I
P
C
C
F
T
The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.
D
SYMBOL
Y
j
VHF applications such as VHF television tuners and FM
tuners with 12 V supply voltage. The device is also
suitable for use in professional communications
equipment.
DS
tot
ig1-s
rs
Silicon N-channel dual gate MOS-FET
fs
drain-source voltage (DC)
drain current (DC)
total power dissipation
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
noise figure
operating junction temperature
CAUTION
PARAMETER
Rev. 04 - 21 November 2007
T
f = 1 kHz; I
V
f = 1 MHz; I
V
f = 1 MHz; I
V
G
V
amb
G2-S
G2-S
G2-S
G2-S
S
= 2 mS; I
= 60 C
= 4 V
= 4 V
= 4 V
= 4 V; f = 200 MHz
D
PINNING
CONDITIONS
D
D
handbook, halfpage
D
= 15 mA; V
= 15 mA; V
= 15 mA; V
= 15 mA; V
Marking code: %MB.
Fig.1
PIN
1
2
3
4
Top view
Simplified outline (SOT143B) and symbol.
DS
4
DS
DS
SYMBOL
DS
1
= 10 V;
= 10 V;
= 10 V;
s, b
= 10 V;
g
g
d
2
1
3
2
source
drain
gate 2
gate 1
25
4
30
1.2
TYP.
MAM039
DESCRIPTION
Product specification
g 2
g 1
20
40
200
150
MAX.
BF992
2 of 9
V
mA
mW
mS
pF
fF
dB
C
UNIT
s,b
d