BF996S NXP Semiconductors, BF996S Datasheet - Page 3

• Manufacturer Part Number: BF996S
• Description: Depletion type Field-Effect Transistor in a plastic SOT143 microminiature package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note to the Limiting values and the Thermal characteristics
1. Device mounted on a ceramic substrate of 8  10  0.7 mm.
April 1991
handbook, halfpage
V
I
I
I
I
P
T
T
R
SYMBOL
SYMBOL
D
D(AV)
G1-S
G1-S
stg
j
DS
tot
N-channel dual-gate MOS-FET
th j-a
(mW)
P tot
200
100
0
0
drain-source voltage
drain current (DC)
average drain current
gate 1 source
gate 2 source
total power dissipation
storage temperature range
junction temperature
thermal resistance from junction to ambient
Fig.2 Power derating curve.
PARAMETER
PARAMETER
100
T amb (°C)
MGE792
200
up to T
in free air; note 1
amb
3
CONDITIONS
= 60 C; note 1
CONDITIONS






65

MIN.
VALUE
460
Product specification
20
30
30
10
10
200
+150
150
MAX.
BF996S
UNIT
K/W
V
mA
mA
mA
mA
mW
C
C
UNIT