STPSC806 STMicroelectronics, STPSC806 Datasheet - Page 2

• Manufacturer Part Number: STPSC806
• Description: 600 V power Schottky silicon carbide diode
• Manufacturer: STMicroelectronics

Characteristics
1
2/8
Characteristics
Table 2.
Table 3.
Table 4.
1. t
2. t
To evaluate the conduction losses use the following equation:
P = 1.2 x I
Table 5.
Symbol
Symbol
I
Symbol
Symbol
V
V
F(RMS)
I
I
I
I
F(AV)
R
R
T
FSM
FRM
F
RRM
p
p
T
Q
stg
th(j-c)
C
(1)
(2)
= 10 ms, δ < 2%
= 500 µs, δ < 2%
j
c
Reverse leakage
current
Forward voltage drop
Repetitive peak reverse voltage
Forward rms current
Average forward current
Surge non repetitive forward
current
Repetitive peak forward current T
Storage temperature range
Operating junction temperature
F(AV)
Total capacitive charge
Total capacitance
Junction to case
Absolute ratings (limiting values at 25 °C unless otherwise specified)
Thermal resistance
Static electrical characteristics
Other parameters
+ 0.113 x I
Parameter
Parameter
F
2
Parameter
(RMS)
Doc ID 16286 Rev 3
T
T
T
T
j
j
j
j
= 25 °C
= 150 °C
= 25 °C
= 150 °C
V
T
V
V
Parameter
j
r
r
r
Tests conditions
= 150 °C
= 400 V, I
= 0 V, T
= 400 V, T
T
t
t
t
p
p
p
c
c
= 10 ms sinusoidal, T
= 10 ms sinusoidal, T
= 10 µs square, T
= 115 °C, δ = 0.5
= 115 °C, T
c
V
I
= 25 °C, F = 1 Mhz
F
F
Test conditions
R
c
= 8 A
= 8 A dI
= 25 °C, F = 1 Mhz
= V
RRM
j
= 150 °C, δ = 0.1,
F
Maximum value
/dt = -200 A/µs
c
= 25 °C
Min.
-
-
-
-
c
c
2.4
= 25 °C
= 125 °C
Typ.
150
1.4
1.6
20
Max.
1000
100
1.7
2.1
-55 to +175
-40 to +175
Typ.
450
Value
10
35
600
120
18
30
24
30
8
STPSC806
°C/W
Unit
Unit
µA
V
Unit
nC
pF
Unit
°C
°C
V
A
A
A
A