STPSC806 STMicroelectronics, STPSC806 Datasheet - Page 3

• Manufacturer Part Number: STPSC806
• Description: 600 V power Schottky silicon carbide diode
• Manufacturer: STMicroelectronics

STPSC806
Figure 1.
Figure 3.
70
60
50
40
30
20
10
16
14
12
10
0
8
6
4
2
0
0.0
0
δ=0.3
δ=0.5
δ=0.1
δ=1
25
0.5
δ=0.7
Forward voltage drop versus
forward current (typical values)
Peak forward current versus case
temperature
50
T
T
j
j
=25 °C
=25 °C
1.0
75
T
C
(°C)
1.5
100
2.0
125
T
T
j
j
V
=175 °C
=175 °C
FM
T
T
(V)
δ
j
j
=150 °C
=150 °C
2.5
=tp/T
150
Doc ID 16286 Rev 3
T
tp
3.0
175
Figure 2.
Figure 4.
350
300
250
200
150
100
1.E+04
1.E+03
1.E+02
1.E+01
1.E+00
50
1.E-01
0
1
0
50
Reverse leakage current versus
reverse voltage applied
(maximum values)
Junction capacitance versus
reverse voltage applied
(typical values)
100
T
T
j
j
=150 °C
=150 °C
150
10
200
250
T
T
j
j
V
=175 °C
=175 °C
R
(V)
300
350
T
T
j
j
=25 °C
=25 °C
100
400
Characteristics
450
V
OSC
F=1 MHz
T
500
=30 mV
j
=25 °C
V
R
(V)
550
RMS
1000
600
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