STTH30R04 STMicroelectronics, STTH30R04 Datasheet - Page 2

• Manufacturer Part Number: STTH30R04
• Description: Ultrafast recovery diodes
• Manufacturer: STMicroelectronics

Specifications of STTH30R04

• Insulated Package: DOP3I

Characteristics
1
2/10
Characteristics
Table 2.
Table 3.
1. Pulse test: t
2. Pulse test: t
To evaluate the conduction losses use the following equation:
P = 0.9 x I
Table 4.
Symbol
Symbol
V
I
V
I
R
RM
F
t
t
FP
rr
(1)
fr
(2)
Symbol
R
th(j-c)
Reverse leakage current
Forward voltage drop
Reverse recovery time
Reverse recovery current
Forward recovery time
Forward recovery voltage
F(AV)
p
p
Thermal parameters
Static electrical characteristics
Dynamic characteristics
= 5 ms, δ < 2 %
= 380 µs, δ < 2 %
+ 0.01 x I
Parameter
Parameter
Junction to case
F
2
(RMS)
I
V
I
V
I
I
I
V
I
V
I
V
F
F
F
RR
F
F
F
T
T
T
T
T
T
T
T
R
R
R
FR
FR
Parameter
= 1 A, dI
= 1 A, dI
= 1 A, I
= 30 A, dI
= 30 A
= 30 A
j
j
j
j
j
j
j
j
= 30 V, T
= 30 V, T
= 160 V, T
= 25° C
= 100° C
= 125° C
= 25° C
= 150° C
= 25° C
= 100° C
= 150° C
= 0.25 A, T
= 1.1 x V
= 1.1 x V
TO-220AC / DO-247 / D
DOP3I
Test conditions
Test conditions
R
F
F
= 1 A,
/dt = -200 A/µs,
/dt = -15 A/µs,
F
j
j
dI
dI
/dt = -200 A/µs,
= 25° C
= 25° C
j
Fmax
Fmax
= 125° C
F
F
j
V
I
I
/dt = 100 A/µs
/dt = 100 A/µs
F
F
= 25° C
R
= 15 A
= 30 A
, T
, T
= V
j
j
= 25° C
= 25° C
RRM
2
PAK
Min
Min
Value
0.97
Typ
1.15
0.8
15
1.9
3
Typ Max
2.9
24
78
10
STTH30R04
Max
1.26
1.45
150
1.0
1.3
1.2
100
500
15
30
35
50
14
°C/W
Unit
Unit
Unit
µA
ns
ns
A
V
V