STTH30R04 STMicroelectronics, STTH30R04 Datasheet - Page 3

• Manufacturer Part Number: STTH30R04
• Description: Ultrafast recovery diodes
• Manufacturer: STMicroelectronics

Specifications of STTH30R04

• Insulated Package: DOP3I

STTH30R04
Figure 1.
Figure 3.
Figure 5.
1.0
0.1
180
160
140
120
100
50
45
40
35
30
25
20
15
10
5
0
80
60
40
20
1.E-03
0
0
10
Single pulse
TO-220AC
DO-247
DOP-3I
D²PAK
5
δ=0.05
Conduction losses versus
average current
Relative variation of thermal
impedance junction to case
versus pulse duration
Reverse recovery time versus
dI
10
F
/dt (typical values)
1.E-02
δ=0.1
15
dI
I
F(AV)
δ=0.2
F
/dt(A/µs)
100
20
tp(s)
(A)
T
T
j
=125° C
j
=25° C
25
1.E-01
δ=0.5
30
δ
=tp/T
V
δ=1
I
F
R
= 30 A
=320 V
35
T
1.E+00
tp
1000
40
Figure 2.
Figure 4.
Figure 6.
22
20
18
16
14
12
10
200
180
160
140
120
100
750
700
650
600
550
500
450
400
350
300
250
200
150
100
8
6
4
2
0
80
60
40
20
50
0
0
10
0.0
10
V
I
F
R
= 30 A
=320 V
0.2
V
I
F
R
= 30 A
=320 V
0.4
Forward voltage drop versus
forward current
Peak reverse recovery current
versus dI
Reverse recovery charges versus
dI
0.6
F
/dt (typical values)
0.8
(Typical values)
(Typical values)
(Maximum values)
(Maximum values)
T
T
J
J
1.0
=150°C
=150°C
T
T
F
J
J
=150°C
=150°C
/dt (typical values)
1.2
100
100
T
j
=125° C
T
T
1.4
T
j
j
=25° C
=125° C
j
=25° C
1.6
dI
(Maximum values)
(Maximum values)
1.8
F
Characteristics
/dt(A/µs)
dI
T
T
J
J
F
=25°C
=25°C
2.0
/dt(A/µs)
2.2
V
FM
2.4
(V)
1000
1000
2.6
3/10