STTH1506D STMicroelectronics, STTH1506D Datasheet

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STTH1506D

Manufacturer Part Number
STTH1506D
Description
Tandem 600V Hyperfast Boost Diode
Manufacturer
STMicroelectronics
Datasheet

Specifications of STTH1506D

Package Capacitance
C=16pF

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MAJOR PRODUCTS CHARACTERISTICS
FEATURES AND BENEFITS
ABSOLUTE RATINGS (limiting values)
October 2003 - Ed: 2A
Symbol
I
ESPECIALLY SUITED AS BOOST DIODE IN
CONTINUOUS
CORRECTORS
CONDITIONS
DESIGNED FOR HIGH DI/DT OPERATION.
HYPERFAST
COMPETE WITH SIC DEVICES. ALLOWS
DOWNSIZING OF MOSFET AND HEATSINKS
INTERNAL CERAMIC INSULATED DEVICES
WITH EQUAL THERMAL CONDITIONS FOR
BOTH 300V DIODES
INSULATION
PLACEMENT
MOSFET AND FLEXIBLE HEATSINKING ON
COMMON OR SEPARATE HEATSINK
STATIC AND DYNAMIC EQUILIBRIUM OF
INTERNAL DIODES ARE WARRANTED BY
DESIGN
PACKAGE CAPACITANCE: C=16pF
Ipeak
V
F(RMS)
I
T
FSM
RRM
Tj
stg
I
V
Tj (max)
RM
t
rr
F
V
I
F(AV)
(max)
(typ.)
®
RRM
Repetitive peak reverse voltage
RMS forward current
Surge non repetitive forward current
Peak current waveform
Storage temperature range
Maximum operating junction temperature
(typ.)
RECOVERY
ON
MODE
AND
(2500V
SAME
HARD
POWER
RMS
HEATSINK
CURRENT
150 °C
Tandem 600V HYPERFAST BOOST DIODE
600 V
16 ns
4.8 A
2.4 V
15 A
)
SWITCHING
Parameter
ALLOWS
FACTOR
TO
AS
tp = 10 ms sinusoidal
DESCRIPTION
The TURBOSWITCH “H” is an ultra high
performance diode composed of two 300V dice in
series. TURBOSWITCH “H” family drastically cuts
losses in the associated MOSFET when run at
high dI
= 0.15 Tc = 120°C
F
/dt.
1
(insulated)
STTH1506DPI
DOP3I
2
-65 +150
Value
+ 150
600
130
26
35
1
2
Unit
°C
°C
V
A
A
A
1/5

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STTH1506D Summary of contents

Page 1

... The TURBOSWITCH “H” ultra high performance diode composed of two 300V dice in ) ALLOWS series. TURBOSWITCH “H” family drastically cuts RMS HEATSINK AS losses in the associated MOSFET when run at high dI Parameter sinusoidal = 0. 120°C STTH1506DPI DOP3I (insulated) /dt. F Value 600 26 130 35 ...

Page 2

... STTH1506DPI THERMAL AND POWER DATA Symbol Parameter R Junction to case th (j-c) STATIC ELECTRICAL CHARACTERISTICS (for both diodes) Symbol Parameter I * Reverse leakage R current V ** Forward voltage drop F Pulse test 100ms, < 380µs, < evaluate the maximum conduction losses use the following equation 1 0.047 x I ...

Page 3

... V =400V R V =400V 220 T =125° =125°C 200 180 160 I =0 140 F F(AV) 120 100 800 1000 0 STTH1506DPI (A) T =125°C j (maximum values) T =125°C j (typical values) (maximum values F(AV ...

Page 4

... STTH1506DPI Fig. 7: Softness factor versus dI values F(AV =400V R T =125°C j 0.70 0.60 0.50 0.40 0.30 dI /dt(A/µs) F 0.20 0 200 400 600 Fig. 9: Transient peak forward voltage versus dI /dt (typical values ( F(AV =125° /dt(A/µ ...

Page 5

... Sweden - Switzerland - United Kingdom - United States REF Package Weight DOP3I 4.46 g. © 2003 STMicroelectronics - All rights reserved. STMicroelectronics GROUP OF COMPANIES www.st.com STTH1506DPI DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.4 4.6 0.173 0.181 1.45 1.55 0.057 0.061 14.35 15.60 0.565 0.614 0.5 0.7 ...

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