STTH1506D STMicroelectronics, STTH1506D Datasheet - Page 2

• Manufacturer Part Number: STTH1506D
• Description: Tandem 600V Hyperfast Boost Diode
• Manufacturer: STMicroelectronics

Specifications of STTH1506D

• Package Capacitance: C=16pF

STTH1506DPI
STATIC ELECTRICAL CHARACTERISTICS (for both diodes)
Pulse test: * tp = 100ms, < 2%
To evaluate the maximum conduction losses use the following equation:
P = 1.7 x I
RECOVERY CHARACTERISTICS
2/5
THERMAL AND POWER DATA
TURN-ON SWITCHING CHARACTERISTICS
Symbol
Symbol
Symbol
Symbol
R
V
th (j-c)
V
I
Q
I
RM
t
S
t
R
F
FP
rr
fr
rr
**
*
** tp = 380µs, < 2%
F(AV)
Junction to case
Reverse recovery
time
Reverse recovery
current
Reverse recovery
softness factor
Reverse recovery
charges
Forward
recovery time
Forward
recovery voltage
Reverse leakage
current
Forward voltage drop
Parameter
+ 0.047 x I
Parameter
Parameter
Parameter
F
2
(RMS)
I
V
I
I
I
I
V
V
dI
F
F
F
R
F
FR
R
R
= 15 A dI
= 15 A dI
F
= 0.5 A Irr = 0.25A
= 1 A dI
= 1 A
/dt = -200 A/µs
= 30 V
= 400 V I
= 1.1 x V
V
I
F
R
= 15 A
= V
Tests Conditions
Tests Conditions
F
RRM
Tests Conditions
F
F
/dt = - 50A/µs
/dt = 100A/µs,
/dt = 100 A/µs
F
F
max
= 15 A
Test conditions
Tj = 25°C
Tj = 125°C
Tj = 25 C
Tj = 150°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 25°C
Min.
Min.
Min.
Typ.
1.95
Value
30
Typ.
1.6
Typ.
4.8
0.4
16
80
Max.
200
3.6
2.4
20
Max.
200
Max.
6
6.0
35
Unit
Unit
C/W
µA
Unit
V
Unit
ns
V
nC
ns
A
-