STM32W108C8 STMicroelectronics, STM32W108C8 Datasheet - Page 207

• Manufacturer Part Number: STM32W108C8
• Description: High-performance, IEEE 802.15.4 wireless system-on-chip with 64-Kybte Flash memory
• Manufacturer: STMicroelectronics

Specifications of STM32W108C8

• Receive Current (w/ Cpu): 27 mA
• Transmit Current (w/ Cpu, +3 Dbm Tx): 31 mA
• Low Deep Sleep Current, With Retained Ram And Gpio: 400 nA/800 nA with/without sleep timer
• Standard Arm Debug Capabilities: Flash patch and breakpoint; data watchpoint and trace; instrumentation trace macrocell
• Single Voltage Operation: 2.1-3.6 V with internal 1.8 V and 1.25 V regulators

STM32W108C8
14.8
Table 150. Digital I/O characteristics (continued)
Non-RF system electrical characteristics
Table 151
Table 151. Non-RF system electrical characteristics
Output voltage for logic 0
Output voltage for logic 1
Output source current (standard
current pad)
Output sink current (standard
current pad)
Output source current
high current pad: PA6, PA7,
PB6, PB7, PC0
Output sink current
high current pad: PA6, PA7,
PB6, PB7, PC0
Total output current (for I/O
Pads)
Input voltage threshold for
OSC32A
Input voltage threshold for
OSCA
System wakeup time from deep
sleep
Shutdown time going into deep
sleep
Parameter
lists the non-RF system level characteristics for the STM32W.
Parameter
Doc ID 018587 Rev 2
V
(I
pads, 8 mA for high
current pads)
V
(I
pads, 8 mA for high
current pads)
I
I
I
I
I
OHS
OLS
OHH
OLH
OH
OL
OL
OH
OH
From wakeup event to first
ARM
running from 6MHz internal RC
clock
Includes supply ramp time and
oscillator startup time
From last ARM
instruction to deep sleep mode
+ I
= 4 mA for standard
= 4 mA for standard
OL
®
Conditions
Cortex-M3 instruction
Conditions
®
Cortex-M3
VDD_PAD
VDD_PAD
VDD_PAD
0.82 x
0.2 x
0.2 x
Min.
SA
S
S
0
–
–
–
–
–
Min.
Electrical characteristics
–
–
Typ.
–
–
–
–
–
–
–
–
–
Typ.
110
5
VDD_PAD
VDD_PAD
VDD_PAD
VDD_PAD
0.18 x
Max.
0.8 x
0.8 x
SA
Max.
40
S
S
S
4
4
8
8
–
–
206/215
Unit
Unit
mA
mA
mA
mA
mA
µs
µs
V
V
V
V