STGP35N35LZ STMicroelectronics, STGP35N35LZ Datasheet - Page 3

• Manufacturer Part Number: STGP35N35LZ
• Description: EAS 450 mJ, 345 V, internally clamped IGBT
• Manufacturer: STMicroelectronics

STGB35N35LZ, STGP35N35LZ
1
Electrical ratings
Table 2.
1. Calculated according to the iterative formula:
2. Pulse width limited by maximum junction temperature
Table 3.
Symbol
Symbol
R
I
R
V
V
P
I
I
CP
ESD
V
E
T
C
C
thj-case
thj-amb
CES
ECS
TOT
T
GE
stg
AS
(1)
(1)
j
(2)
Collector-emitter voltage (V
Emitter collector voltage (V
Continuous collector current at T
Continuous collector current at T
Pulsed collector current
Gate-emitter voltage
Total dissipation at T
Single pulse energy
(T
Human body model (R=1,5 kΩ, C=100 pF)
Machine model (R=0, C=100 pF)
Charged device model
Storage temperature
Operating junction temperature
Absolute maximum ratings
Thermal data
Thermal resistance junction-case
Thermal resistance junction-ambient
C
=25 °C, L=1.6 mH, I
I
C
(
T
C
)
Parameter
=
C
Doc ID 12253 Rev 5
Parameter
= 25 °C
-------------------------------------------------------------------------------------------------------
R
C
thj c
= 22 A, V
GE
–
GE
×
= 0)
= 0)
V
C
C
CE sat
= 25 °C
= 100 °C
CC
(
T
= 50 V)
j max
(
) max
(
)
–
)
(
T
T
C
j max
(
)
,
I
C
(
V
T
V
– 55 to 175
CES (clamped)
C
GE (clamped)
)
Value
)
Value
176
450
800
0.85
62.5
20
40
30
80
8
2
Electrical ratings
°C/W
°C/W
Unit
Unit
mJ
kV
kV
°C
W
V
V
A
A
A
V
V
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