STGP35N35LZ STMicroelectronics, STGP35N35LZ Datasheet - Page 4

• Manufacturer Part Number: STGP35N35LZ
• Description: EAS 450 mJ, 345 V, internally clamped IGBT
• Manufacturer: STMicroelectronics

Electrical characteristics
2
4/17
Electrical characteristics
(T
Table 4.
Table 5.
V
V
j
CES(clamped)
GE(clamped)
V
Symbol
=25 °C unless otherwise specified)
Symbol
V
V
(BR)ECS
CE(sat)
C
I
I
R
C
C
GE(th)
GES
CES
R
oes
GE
ies
res
G
Static
Dynamic
Input capacitance
Output capacitance
Reverse transfer
capacitance
Collector emitter
clamped voltage
(V
Emitter collector break-
down voltage (V
Gate emitter clamped
voltage
Collector cut-off current
(V
Gate-emitter leakage
current (V
Gate emitter resistance
Gate resistance
Gate threshold voltage
Collector-emitter
saturation voltage
GE
GE
=0)
= 0)
Parameter
Parameter
CE
= 0)
GE
Doc ID 12253 Rev 5
=0)
V
V
I
T
I
I
V
V
V
V
T
V
V
T
V
V
C
C
G
GE
j
GE
j
j
GE
GE
CE
CE
CE
CE
CE
CE
= - 40 °C to 150 °C
=-40 °C
=150 °C
=2 mA,
= 75 mA
= ± 2 mA
= 25V, f = 1MHz,
= 0
= 15 V, T
=200 V, T
= V
=V
=V
= ±10 V
=4.5 V, I
=4.5 V, I
Test conditions
Test conditions
GE
GE
GE
, I
, I
, I
C
C
C
C
C
j
= 1 mA
= 1 mA,
j
= 1 mA,
=150 °C
= 10 A
= 15 A
=150 °C
STGB35N35LZ, STGP35N35LZ
Min.
Min.
320
500
1.4
1.2
0.7
20
12
12
-
-
-
Typ.
Typ.
1.15
700
150
345
625
1.5
1.6
1.3
28
14
15
6
Max.
Max.
380
100
830
2.3
1.5
1.7
16
10
20
-
-
-
Unit
Unit
pF
pF
pF
µA
µA
µA
kΩ
kΩ
V
V
V
V
V
V
V
V