STGBL6NC60D STMicroelectronics, STGBL6NC60D Datasheet - Page 3

• Manufacturer Part Number: STGBL6NC60D
• Description: 6A, 600 V hyper fast IGBT with very fast diode
• Manufacturer: STMicroelectronics

STGBL6NC60D - STGDL6NC60D - STGPL6NC60D - STGFL6NC60D
1
Electrical ratings
Table 2.
1. Calculated according to the iterative formula:
2. Vclamp = 80%,(V
3. Pulse width limited by max junction temperature allowed
Table 3.
Symbol
Symbol
R
R
V
I
I
P
I
V
I
I
CL
CP
V
FSM
C
C
thj-case
thj-amb
CES
I
TOT
T
ISO
GE
F
(1)
(1)
(2)
(3)
j
Collector-emitter voltage (V
Collector current (continuous) at T
Collector current (continuous) at T
Turn-off latching current
Pulsed collector current
Gate-emitter voltage
Diode RMS forward current at T
Surge non repetitive forward current t
sinusoidal
Total dissipation at T
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1 s; T
Operating junction temperature
Absolute maximum ratings
Thermal resistance
Thermal resistance junction-case IGBT max.
Thermal resistance junction-case diode max.
Thermal resistance junction-ambient max.
CES
C
), Tj =150°C, R
=25 °C)
I
C
(
T
C
)
Parameter
Parameter
=
C
= 25 °C
--------------------------------------------------------------------------------------------------------- -
R
G
thj c
= 10 Ω, V
–
GE
×
= 0)
C
V
GE
CE sat
= 25 °C
C
C
= 15 V
= 25 °C
= 100 °C
(
T
p
=10ms
j max
(
) max
(
)
–
)
(
T
T
C
j max
(
DPAK
DPAK
100
2.5
4.5
13
50
)
--
5
,
I
C
(
T
– 55 to 150
C
TO-220
D²PAK
TO-220
D²PAK
)
)
2.2
Value
Value
4
14
56
600
±20
--
6
18
18
20
7
62.5
Electrical ratings
TO-220FP
TO-220FP
2500
5.6
22
7
7
3
°C/W
°C/W
°C/W
Unit
Unit
°C
W
3/19
V
A
A
A
A
V
A
A
V