STGBL6NC60D STMicroelectronics, STGBL6NC60D Datasheet - Page 4

• Manufacturer Part Number: STGBL6NC60D
• Description: 6A, 600 V hyper fast IGBT with very fast diode
• Manufacturer: STMicroelectronics

Electrical characteristics
2
4/19
Electrical characteristics
(T
Table 4.
Table 5.
V
Symbol
Symbol
V
V
CASE
(BR)CES
CE(sat)
I
I
C
GE(th)
C
C
Q
Q
CES
GES
g
Q
oes
ies
res
fs
ge
gc
g
=25 °C unless otherwise specified)
Collector-emitter
breakdown voltage
(V
Collector-emitter saturation
voltage
Gate threshold voltage
Collector cut-off current
(V
Gate-emitter leakage
current (V
Forward transconductance V
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
Dynamic electrical characteristics
GE
GE
Static electrical characteristics
= 0)
= 0)
Parameter
Parameter
CE
STGBL6NC60D - STGDL6NC60D - STGPL6NC60D - STGFL6NC60D
= 0)
I
V
V
V
V
V
V
V
V
V
V
V
(see Figure 17)
C
GE
GE
GE
CE
CE
CE
GE
CE
GE
GE
CE
CE
= 1 mA
= V
= 15 V, I
= 15 V, I
= 15 V, I
= 600 V
= ±20 V
= 600 V, T
= 15 V
= 25 V, f = 1 MHz,
= 0
= 390 V, I
= 15 V
Test conditions
Test conditions
GE
, I
,
C
C
I
C
C
C
= 250 µA
= 3 A,T
= 1.5 A
= 3 A
= 3 A
C
C
= 125 °C
= 3 A,
C
=125°C
Min.
3.75
600
Min.
Typ.
Typ. Max.
32.5
1.9
2.2
208
5.4
2.6
4.9
2
3
12
Max.
±100
5.75
2.9
50
5
Unit
Unit
nC
nC
nC
pF
pF
pF
mA
µA
nA
V
V
V
V
V
S