STGB30H60DF STMicroelectronics, STGB30H60DF Datasheet - Page 2

• Manufacturer Part Number: STGB30H60DF
• Description: 30 A, 600 V field stop trench gate IGBT with Ultrafast diode
• Manufacturer: STMicroelectronics

Electrical ratings
1
2/13
Electrical ratings
Table 2.
1.
Table 3.
Symbol
Symbol
I
V
P
T
CP
I
V
Pulse width limited by maximum junction temperature and turn-off within RBSOA
R
R
FSM
t
R
CES
STG
T
I
I
TOT
SC
I
GE
C
C
F
thJC
thJC
thJA
J
(1)
Collector-emitter voltage (V
Continuous collector current at T
Continuous collector current at T
Pulsed collector current
Gate-emitter voltage
Diode RMS forward current at T
Surge not repetitive forward current t
sinusoidal
Total dissipation at T
Short-circuit withstand time at V
V
Storage temperature range
Operating junction temperature
Absolute maximum ratings
Thermal data
GE
Thermal resistance junction-case IGBT
Thermal resistance junction-case diode
Thermal resistance junction-ambient
= 15 V
Doc ID 022363 Rev 1
Parameter
C
Parameter
= 25 °C
GE
= 0)
C
CC
C
C
= 25 °C
= 25 °C
= 100 °C
= 400 V,
p
= 10 ms
STGB30H60DF, STGP30H60DF
- 55 to 150
Value
Value
0.83
62.5
600
120
±20
150
2.5
30
60
30
90
6
°C/W
°C/W
°C/W
Unit
Unit
°C
µs
W
V
A
A
A
V
A
A