STGB30H60DF STMicroelectronics, STGB30H60DF Datasheet - Page 4

• Manufacturer Part Number: STGB30H60DF
• Description: 30 A, 600 V field stop trench gate IGBT with Ultrafast diode
• Manufacturer: STMicroelectronics

Electrical characteristics
4/13
Table 7.
1.
2. Turn-off losses include also the tail of the collector current.
Table 8.
Symbol
Symbol
Eon
Eon
E
E
a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs and diode are at the
same temperature (25 °C and 125 °C).
Eon is the turn-on losses when a typical diode is used in the test circuit in
off
off
E
E
I
I
Q
Q
V
rrm
rrm
t
t
ts
ts
rr
rr
F
rr
rr
(2)
(2)
(1)
(1)
Turn-on switching losses
Turn-off switching losses
Total switching losses
Turn-on switching losses
Turn-off switching losses
Total switching losses
Forward on-voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching energy (inductive load)
Collector-emitter diode
Parameter
Parameter
Doc ID 022363 Rev 1
V
R
V
R
T
I
I
I
di/dt = 100 A/µs
I
di/dt = 100 A/µs
J
F
F
F
F
CE
CE
G
G
= 125 °C
= 16 A, T
= 16 A
= 16 A,V
= 16 A,V
= 10 Ω, V
= 10 Ω, V
= 400 V, I
= 400 V, I
Test conditions
Test conditions
R
R
J
GE
GE
= 125 °C
= 400 V,
= 400 V,
C
C
= 30 A,
= 30 A,
= 15 V
= 15 V
,
T
J
=125 °C
STGB30H60DF, STGP30H60DF
Figure
Min.
Min.
2. If the IGBT is offered in
-
-
-
-
-
Typ.
TBD
TBD
TBD
TBD
Typ.
TBD
TBD
TBD
TBD
150
330
1.3
0.5
0.7
5
Max.
Max.
2.2
-
-
-
-
Unit
Unit
nC
nC
ns
ns
mJ
mJ
mJ
mJ
mJ
mJ
V
V
A
A