STW12N120K5 STMicroelectronics, STW12N120K5 Datasheet - Page 4

• Manufacturer Part Number: STW12N120K5
• Description: N-channel 1200 V, 0.58 Ohm, 12 A TO-247 Zener-protected SuperMESH(TM) 5 Power MOSFET
• Manufacturer: STMicroelectronics

Electrical characteristics
2
4/19
Electrical characteristics
(T
Table 4.
Table 5.
1. Time-related is defined as a constant equivalent capacitance giving the same charging time as C
2. Energy-related is defined as a constant equivalent capacitance giving the same stored energy as C
V
Symbol
Symbol
C
R
C
CASE
V
(BR)DSS
C
o(er)
I
I
V
when V
DS(on)
C
C
o(tr)
GS(th)
Q
Q
R
DSS
GSS
Q
DS
oss
rss
iss
gs
gd
G
g
(1)
(2)
increases from 0 to 80% V
= 25 °C unless otherwise specified)
DS
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent capacitance,
time-related
Equivalent capacitance,
energy-related
Intrinsic gate resistance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source breakdown
voltage (V
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
increases from 0 to 80% V
On/off states
Dynamic
DS
= 0)
Parameter
Parameter
GS
GS
= 0)
= 0)
DSS
Doc ID 022133 Rev 1
DSS
f = 1MHz open drain
V
V
V
V
(see
I
V
V
V
V
V
D
GS
GS
DS
DD
DS
DS
GS
DS
GS
= 1 mA
=100 V, f=1 MHz, V
= 960 V, I
=10 V
= 0, V
= 1200 V,
= 1200 V, Tc=125 °C
= ± 20 V
= V
= 10 V, I
Figure
Test conditions
Test conditions
GS
DS
, I
3)
D
D
= 0 to 960 V
D
= 6 A
= 100 µA
= 6 A
GS
=0
1200
Min.
Min.
STB/FW/P/W12N120K5
3
-
-
-
-
-
1700
TBD
TBD
TBD
TBD
TBD
Typ.
Typ.
0.58
110
49
2
4
Max.
Max.
0.69
±10
50
oss
1
5
-
-
-
-
-
oss
when
Unit
Unit
nC
nC
nC
pF
pF
pF
pF
pF
µA
µA
µA
V
V
Ω
Ω