STW12N120K5 STMicroelectronics, STW12N120K5 Datasheet - Page 5

• Manufacturer Part Number: STW12N120K5
• Description: N-channel 1200 V, 0.58 Ohm, 12 A TO-247 Zener-protected SuperMESH(TM) 5 Power MOSFET
• Manufacturer: STMicroelectronics

STB/FW/P/W12N120K5
Table 6.
Table 7.
1.
Table 8.
The built-in-back Zener diodes have been specifically designed to enhance not only the
device’s ESD capability, but also to make them capable of safely absorbing possible voltage
transients that may occasionally be applied from gate to source. In this respect, the Zener
voltage helps to achieve efficient and cost-effective protection of device integrity. These
integrated Zener diodes thus reduce the necessity for external components.
Symbol
Symbol
Symbol
BV
V
t
t
I
I
I
d(on)
d(off)
Pulsed: pulse duration = 300µs, duty cycle 1.5%
RRM
RRM
I
SDM
SD
Q
Q
t
SD
t
t
t
GSO
r
f
rr
rr
rr
rr
(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Gate-source breakdown voltage I
Switching times
Source drain diode
Gate-source Zener diode
Parameter
Parameter
Parameter
Doc ID 022133 Rev 1
I
V
R
(see
I
di/dt = 100 A/µs,
(see
I
di/dt=100 A/µs,
Tj=150 °C
(see
SD
SD
SD
gs
DD
G
=4.7 Ω , V
= 12 A, V
= 12 A, V
= 12 A,V
± 1mA, (open drain)
Test conditions
Test conditions
Test conditions
= 600 V, I
Figure
Figure
Figure
DD
5)
4)
4)
GS
GS
DD
D
= 60 V
=10 V
=0
= 60 V
= 6 A,
Electrical characteristics
Min.
Min.
Min
30
-
-
-
-
-
Typ.
TBD
TBD
TBD
TBD
Typ.
TBD
TBD
TBD
TBD
TBD
TBD
Typ.
-
Max.
Max.
Max.
1.5
12
48
-
Unit
Unit
Unit
µC
µC
ns
ns
ns
ns
ns
ns
A
A
V
A
A
V
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