IXTP16N50PM IXYS, IXTP16N50PM Datasheet

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IXTP16N50PM

Manufacturer Part Number
IXTP16N50PM
Description
Manufacturer
IXYS
Datasheet

Specifications of IXTP16N50PM

Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
7.5
Rds(on), Max, Tj=25°c, (?)
0.42
Ciss, Typ, (pf)
2480
Qg, Typ, (nc)
43
Trr, Typ, (ns)
400
Pd, (w)
75
Rthjc, Max, (k/w)
1.66
Package Style
OVERMOLDED TO-220
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2009 IXYS CORPORATION, All Rights Reserved
PolarHV
MOSFET
(Electrically Isolated Tab)
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C, Unless Otherwise Specified)
T
T
Transient
T
T
T
T
I
T
1.6 mm (0.062 in.) from Case for 10 s
Plastic Body for 10 s
Mounting Torque
V
V
V
V
V
Test Conditions
Continuous
Test Conditions
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
TM
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 25°C to 150°C
= 0V, I
= V
= ±30V, V
= V
= 10V, I
Power
DM
GS
, V
DSS
, I
D
, V
DD
D
D
= 250μA
= 250μA
= 8A, Note 1
≤ V
GS
DS
= 0V
= 0V
DSS
, T
J
GS
=150°C
= 1 MΩ
Advance Technical Information
T
J
= 125°C
JM
IXTP16N50PM
500
Min.
3.0
Characteristic Values
Maximum Ratings
- 55 ... +150
- 55 ... +150
1.13/10
Typ.
± 30
± 40
500
500
750
150
300
260
7.5
2.5
35
16
10
75
Nm/lb.in.
Max.
±100 nA
420 mΩ
5.5
50 μA
5 μA
V/ns
mJ
°C
°C
°C
°C
°C
W
V
V
V
V
V
V
A
A
A
g
V
I
R
OVERMOLDED
(IXTP...M) OUTLINE
G = Gate
S = Source
Features
Advantages
Applications
D25
Plastic Overmolded Tab for Electrical
Isolation
International Standard Package
Avalanche Rated
Fast Intrinsic Diode
Low Package Inductance
High Power Density
Easy to Mount
Space Savings
Switched-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
G
DS(on)
DSS
D
S
= 7.5A
= 500V
≤ ≤ ≤ ≤ ≤
D = Drain
420mΩ Ω Ω Ω Ω
Isolated Tab
DS100149(04/09)

Related parts for IXTP16N50PM

IXTP16N50PM Summary of contents

Page 1

... GSS DSS DS DSS 10V 8A, Note 1 DS(on © 2009 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXTP16N50PM Maximum Ratings 500 = 1 MΩ 500 GS ± 30 ± 750 =150° ... +150 150 - 55 ... +150 300 260 1 ...

Page 2

... DSS D 12 Characteristic Values Min. Typ. JM 400 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTP16N50PM ISOLATED TO-220 (IXTP...M) Max 1.66 °C/W Terminals Gate 2 - Drain (Collector Source (Emitter) Max ...

Page 3

... Value D 2.8 2.6 2.4 2 16A 2 1.6 1.4 1.2 1.0 0.8 75 100 125 150 100 125 150 IXTP16N50PM Fig. 2. Output Characteristics @ 125º 10V Volts DS Fig Normalized to I DS(on) vs. Drain Current V = 10V ...

Page 4

... IXTP16N50PM Fig. 8. Forward Voltage Drop of Intrinsic Diode T = 125ºC J 0.3 0.4 0.5 0.6 0.7 0 Volts SD Fig. 10. Capacitance MHz Volts DS Fig. 12. Maximum Transient Thermal Impedance ...

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