IXTP1N80P IXYS, IXTP1N80P Datasheet

no-image

IXTP1N80P

Manufacturer Part Number
IXTP1N80P
Description
Manufacturer
IXYS
Datasheet

Specifications of IXTP1N80P

Vdss, Max, (v)
800
Id(cont), Tc=25°c, (a)
1.0
Rds(on), Max, Tj=25°c, (?)
14
Ciss, Typ, (pf)
250
Qg, Typ, (nc)
9.0
Trr, Typ, (ns)
700
Pd, (w)
42
Rthjc, Max, (k/w)
3.0
Package Style
TO-220

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTP1N80P
Manufacturer:
IXYS
Quantity:
17 244
Polar
MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
dV/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2009 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C, Unless Otherwise Specified)
TM
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
1.6mm (0.062) from Case for 10s
Plastic Body for 10s
Mounting Torque
TO-263
TO-220
TO-252
TO-251
TO-263 (IXTA)
Test Conditions
V
V
V
V
V
V
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
GS
Power
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
G
= 0V, I
= V
= ±20V, V
= V
= 0V
= 10V, I
DM
GS
, V
DSS
S
, I
DD
D
D
D
= 250μA
≤ V
= 50μA
= 0.5 • I
DS
DSS
= 0V
(TAB)
, T
(TO-220)
D25
J
GS
≤ 150°C
, Note 1
= 1MΩ
Preliminary Technical Information
T
J
= 125°C
TO-220 (IXTP)
IXTA1N80P
IXTP1N80P
IXTU1N80P
IXTY1N80P
JM
G
D
S
800
Min.
-55 ... +150
-55 ... +150
2.0
Maximum Ratings
Characteristic Values
1.13 / 10
2.50
3.00
0.35
0.40
800
800
±20
±30
150
300
260
Typ.
75
42
10
1
2
1
5
(TAB)
±100 nA
Nm/lb.in.
Max.
4.0
30 μA
14
3 μA
V/ns
mJ
°C
°C
°C
°C
°C
W
Ω
V
V
V
V
A
A
A
V
V
g
g
g
g
V
I
R
TO-251 (IXTU)
TO-252 (IXTY)
G = Gate
S = Source
Features
Advantages
Applications
D25
International Standard Packages
Fast Intrinsic Rectifier
Avalanche Rated
Low Package Inductance
Switched-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
Easy to Mount
Space Savings
High Power Density
DS(on)
DSS
G
D
S
≤ ≤ ≤ ≤ ≤ 14Ω Ω Ω Ω Ω
= 800V
= 1A
G
S
D
TAB = Drain
= Drain
DS100112(02/09)
(TAB)
(TAB)

Related parts for IXTP1N80P

IXTP1N80P Summary of contents

Page 1

... GSS DSS DS DSS 10V 0.5 • I DS(on © 2009 IXYS CORPORATION, All Rights Reserved Preliminary Technical Information IXTA1N80P IXTP1N80P IXTU1N80P IXTY1N80P TO-220 (IXTP Maximum Ratings 800 = 1MΩ 800 GS ±20 ± ≤ 150° -55 ...

Page 2

... B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTA1N80P IXTU1N80P Max 3.0 °C/W °C/W Max 1 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 6,583,505 6,710,463 6,771,478 B2 7,071,537 IXTP1N80P IXTY1N80P 7,157,338B2 ...

Page 3

... V - Volts DS Fig Normalized to I DS(on) vs. Junction Temperature 3.0 2 10V GS 2.6 2.4 2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. Case Temperature 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 -50 - Degrees Centigrade C IXTP1N80P IXTY1N80P 0.5A Value 0. 100 125 150 75 100 125 150 ...

Page 4

... Fig. 10. Gate Charge 400V 0. 1mA NanoCoulombs G Fig. 12. Maximum Transient Thermal Impedance 1.0 0.1 0.0001 0.001 0.01 0.1 Pulse Width - Seconds IXTP1N80P IXTY1N80P 40ºC J 25ºC 125ºC 1.0 1.2 1 IXYS REF: T_1N80P(1A)02-10-09-A ...

Page 5

... TO-220 (IXTP) Outline Pins Gate 2 - Drain TO-263 (IXTA) Outline © 2009 IXYS CORPORATION, All Rights Reserved IXTA1N80P IXTP1N80P IXTU1N80P IXTY1N80P TO-251 (IXTU) Outline 1. Gate 2.Drain 3. Source 4. Drain Dim. Millimeter Inches Min. Max. Min. Max. A 2.19 2.38 .086 .094 A1 0.89 1.14 0.35 .045 b 0.64 0.89 .025 .035 b1 0.76 1.14 .030 .045 b2 5 ...

Related keywords