IXTP1N80P IXYS, IXTP1N80P Datasheet - Page 4
IXTP1N80P
Manufacturer Part Number
IXTP1N80P
Description
Manufacturer
IXYS
Datasheet
1.IXTU1N80P.pdf
(5 pages)
Specifications of IXTP1N80P
Vdss, Max, (v)
800
Id(cont), Tc=25°c, (a)
1.0
Rds(on), Max, Tj=25°c, (?)
14
Ciss, Typ, (pf)
250
Qg, Typ, (nc)
9.0
Trr, Typ, (ns)
700
Pd, (w)
42
Rthjc, Max, (k/w)
3.0
Package Style
TO-220
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
1,000
100
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
1
0.40
2.5
0
0.45
f
= 1 MHz
3.0
5
Fig. 9. Forward Voltage Drop of
0.50
3.5
10
Fig. 7. Input Admittance
0.55
Fig. 11. Capacitance
T
J
= 125ºC
Intrinsic Diode
4.0
15
0.60
V
V
V
DS
GS
SD
T
0.65
4.5
20
- Volts
J
- Volts
- Volts
= 125ºC
- 40ºC
25ºC
0.70
5.0
25
0.75
5.5
30
0.80
C iss
C oss
C rss
T
J
= 25ºC
6.0
35
0.85
0.90
6.5
40
10.0
1.0
0.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10
0.0001
9
8
7
6
5
4
3
2
1
0
0.0
0
V
I
I
D
G
DS
= 0.5A
= 1mA
1
Fig. 12. Maximum Transient Thermal
0.2
= 400V
0.001
2
Fig. 8. Transconductance
0.4
IXTA1N80P
IXTU1N80P
Fig. 10. Gate Charge
Pulse Width - Seconds
3
Q
G
0.01
I
Impedance
- NanoCoulombs
D
0.6
- Amperes
4
0.8
5
0.1
T
6
J
= - 40ºC
IXTP1N80P
IXTY1N80P
1.0
7
IXYS REF: T_1N80P(1A)02-10-09-A
1
25ºC
125ºC
1.2
8
1.4
10
9