IXTM12N100 IXYS, IXTM12N100 Datasheet

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IXTM12N100

Manufacturer Part Number
IXTM12N100
Description
High Voltage Power MOSFETs (>1200V)
Manufacturer
IXYS
Datasheet

Specifications of IXTM12N100

Vdss, Max, (v)
1000
Id(cont), Tc=25°c, (a)
12
Rds(on), Max, Tj=25°c, (?)
1.05
Ciss, Typ, (pf)
4000
Qg, Typ, (nc)
150
Trr, Typ, (ns)
1000
Pd, (w)
300
Rthjc, Max, (k/w)
0.42
Package Style
TO-204
MegaMOS
N-Channel Enhancement Mode
Symbol
V
V
V
V
I
I
P
T
T
T
M
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
Symbol
V
V
I
I
R
DM
D25
GSS
DSS
GS
GSM
JM
stg
DSS
DGR
D
J
DSS
GS(th)
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
T
T
Mounting torque
Test Conditions
V
V
V
V
V
V
Pulse test, t 300 s, duty cycle d 2 %
J
J
C
C
C
GS
GS
GS
GS
DS
DS
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 25 C, pulse width limited by T
= 25 C
= 0 V, I
= V
= 20 V
= 0.8 • V
= 0 V
= 10 V, I
TM
GS
, I
FET
D
D
DC
D
= 250 A
= 3 mA
DSS
, V
= 0.5 I
DS
= 0
D25
GS
= 1 M
T
T
10N100
12N100
J
J
= 25 C
= 125 C
(T
J
= 25 C, unless otherwise specified)
JM
IXTH / IXTM 10N100
IXTH / IXTM 12N100
10N100
12N100
10N100
12N100
TO-204 = 18 g, TO-247 = 6 g
1000
min.
Characteristic Values
2
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
1.13/10 Nm/lb.in.
1000
1000
300
150
300
20
30
10
12
40
48
max.
1.20
1.05
100
250
4.5
1
mA
W
nA
V
V
V
V
A
A
A
A
V
V
C
C
C
C
A
TO-247 AD (IXTH)
TO-204 AA (IXTM)
G = Gate,
S = Source,
Features
l
l
l
l
l
Applications
l
l
l
l
Advantages
l
l
l
1000 V
1000 V
International standard packages
Low R
Rugged polysilicon gate cell structure
Low package inductance (< 5 nH)
- easy to drive and to protect
Fast switching times
Switch-mode and resonant-mode
power supplies
Motor controls
Uninterruptible Power Supplies (UPS)
DC choppers
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
Space savings
High power density
V
DSS
DS (on)
HDMOS
D = Drain,
TAB = Drain
10 A
12 A
I
D25
TM
G
process
1.20
1.05
D (TAB)
91540E(5/96)
R
DS(on)
1 - 4

IXTM12N100 Summary of contents

Page 1

... 0.5 I DS(on D25 Pulse test, t 300 s, duty cycle IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXTH / IXTM 10N100 IXTH / IXTM 12N100 Maximum Ratings 1000 = 1 M 1000 ...

Page 2

... C, unless otherwise specified) J min. typ. 10N100 12N100 10N100 12N100 JM = 100 V 1000 R IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXTH 10 N100 IXTH 12 N100 IXTM 10 N100 IXTM 12 N100 TO-247 AD (IXTH) Outline max. ...

Page 3

... Case Temperature 12N100 12 10 10N100 -50 - Degrees C C © 2000 IXYS All rights reserved V = 10V 15V 100 125 150 IXTH 10 N100 IXTH 12 N100 IXTM 10 N100 IXTM 12 N100 Fig. 2 Input Admittance 20 ...

Page 4

... V - Volts DS Fig.11 Transient Thermal Impedance 1 D=0.5 0.1 D=0.2 D=0.1 D=0.05 0.01 D=0.02 D=0.01 Single Pulse 0.001 0.00001 0.0001 © 2000 IXYS All rights reserved 100 125 150 20 0.001 0.01 Time - Seconds IXTH 10 N100 IXTH 12 N100 IXTM 10 N100 IXTM 12 N100 Fig.8 Forward Bias Safe Operating Area Limited DS(on ...

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