IXTM12N100 IXYS, IXTM12N100 Datasheet - Page 3

• Manufacturer Part Number: IXTM12N100
• Description: High Voltage Power MOSFETs (>1200V)
• Manufacturer: IXYS

Specifications of IXTM12N100

• Vdss, Max, (v): 1000
• Id(cont), Tc=25°c, (a): 12
• Rds(on), Max, Tj=25°c, (?): 1.05
• Ciss, Typ, (pf): 4000
• Qg, Typ, (nc): 150
• Trr, Typ, (ns): 1000
• Pd, (w): 300
• Rthjc, Max, (k/w): 0.42
• Package Style: TO-204

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1.5
1.4
1.3
1.2
1.1
1.0
0.9
20
18
16
14
12
10
20
18
16
14
12
10
8
6
4
2
0
8
6
4
2
0
-50
0
0
Fig. 1 Output Characteristics
Fig. 3 R
Fig. 5 Drain Current vs.
T
J
= 25°C
-25
T
J
= 25°C
Case Temperature
5
12N100
10N100
DS(on)
5
0
T
vs. Drain Current
25
I
C
D
10
V
- Degrees C
- Amperes
DS
V
GS
10
50
- Volts
= 10V
15
75
V
GS
= 15V
100 125 150
15
20
V
GS
= 10V
7V
5V
6V
20
25
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
20
18
16
14
12
10
8
6
4
2
0
-50
-50
Fig. 4 Temperature Dependence
Fig. 2 Input Admittance
Fig. 6 Temperature Dependence of
0
IXTH 10 N100
IXTM 10 N100
1
-25
-25
V
GS(th)
of Drain to Source Resistance
Breakdown and Threshold Voltage
2
0
0
3
T
T
T
J
25
25
= 25°C
J
J
V
4
- Degrees C
- Degrees C
GS
I
D
50
50
- Volts
= 6A
5
6
75
75
IXTH 12 N100
IXTM 12 N100
7
100 125 150
100 125 150
BV
8
DSS
9
10
3 - 4