IXTJ6N150 IXYS, IXTJ6N150 Datasheet

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IXTJ6N150

Manufacturer Part Number
IXTJ6N150
Description
High Voltage Power MOSFETs (>1200V)
Manufacturer
IXYS
Datasheet

Specifications of IXTJ6N150

Vdss, Max, (v)
1500
Id(cont), Tc=25°c, (a)
3
Rds(on), Max, Tj=25°c, (?)
3.85
Ciss, Typ, (pf)
2230
Qg, Typ, (nc)
67
Trr, Typ, (ns)
1500
Pd, (w)
125
Rthjc, Max, (k/w)
1.0
Package Style
ISO TO-247

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTJ6N150
Manufacturer:
IXYS
Quantity:
233
High Voltage
Power MOSFET
(Electrically Isolated Tab)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
T
F
V
Weight
Symbol
(T
BV
V
I
I
R
© 2012 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
C
DSS
DGR
GSS
GSM
AS
D
ISOL
GS(th)
DS(on)
J
DSS
= 25°C, Unless Otherwise Specified)
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
Mounting Torque
50/60 Hz, RM, t = 1min
V
V
V
V
V
Test Conditions
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0V, I
= V
= ±30V, V
= V
= 10V, I
DM
GS
, V
DSS
, I
D
, V
DD
D
D
= 250μA
= 250μA
= 3A, Note 1
≤ V
GS
DS
= 0V
= 0V
DSS
, T
J
GS
≤ 150°C
= 1MΩ
Advance Technical Information
T
J
= 125°C
JM
IXTJ6N150
- 55 ... +150
- 55 ... +150
1500
Characteristic Values
Min.
3.0
1.13 / 10
Maximum Ratings
1500
1500
2500
260
±30
±40
500
125
150
300
Typ.
24
5
3
3
5
±100 nA
Max.
3.85
Nm/lb.in
250 μA
5.0
25 μA
V/ns
mJ
V~
°C
°C
°C
°C
°C
W
Ω
V
V
V
V
A
A
A
V
V
g
V
I
R
ISO TO-247
G = Gate
S = Source
Features
Advantages
Applications
D25
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
2500V~ Electrical Isolation
Fast Intrinsic Diode
Avalanche Rated
Molding Epoxies meet UL 94 V-0
Flammability Classification
High Voltage Power Supplies
Capacitor Discharge Applications
Pulse Circuits
Easy to Mount
Space Savings
High Power Density
DS(on)
DSS
E153432
G
D
=
=
≤ ≤ ≤ ≤ ≤
TM
S
D
1500V
3.85
3A
Isolated Tab
= Drain
DS100448(02/12)
Ω Ω Ω Ω Ω

Related parts for IXTJ6N150

IXTJ6N150 Summary of contents

Page 1

... GSS DSS DS DSS 10V 3A, Note 1 DS(on © 2012 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXTJ6N150 Maximum Ratings 1500 = 1MΩ 1500 GS ±30 ± 500 ≤ 150° 125 - 55 ... +150 150 - 55 ... +150 300 260 1 ...

Page 2

... DSS D 36 0.30 Characteristic Values Min. Typ. JM 1.5 12.0 9.0 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTJ6N150 ISO TO-247 (IXTJ) OUTLINE Max 1.0 °C/W °C/W Max 1.3 V μs A μC 6,404,065 B1 6,683,344 6,727,585 ...

Page 3

... Fig Normalized to I DS(on) Junction Temperature V = 10V GS -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. Case Temperature -50 - Degrees Centigrade C IXTJ6N150 = 25º 10V Value vs 100 125 150 100 125 150 ...

Page 4

... Q - NanoCoulombs G Fig. 12. Forward-Bias Safe Operating Area R Limit DS(on 150º 25ºC C Single Pulse 10 100 V - Volts DS IXTJ6N150 = - 40ºC J 25ºC 125º 25µs 100µs 1ms 10ms 100ms DC 1,000 10,000 ...

Page 5

... IXYS CORPORATION, All Rights Reserved Fig. 13. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXTJ6N150 0.1 1 IXYS REF: T_6N150 (6N)02-23-12 10 ...

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