IXTJ6N150 IXYS, IXTJ6N150 Datasheet - Page 4

• Manufacturer Part Number: IXTJ6N150
• Description: High Voltage Power MOSFETs (>1200V)
• Manufacturer: IXYS

Specifications of IXTJ6N150

• Vdss, Max, (v): 1500
• Id(cont), Tc=25°c, (a): 3
• Rds(on), Max, Tj=25°c, (?): 3.85
• Ciss, Typ, (pf): 2230
• Qg, Typ, (nc): 67
• Trr, Typ, (ns): 1500
• Pd, (w): 125
• Rthjc, Max, (k/w): 1.0
• Package Style: ISO TO-247

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
100
10
20
18
16
14
12
10
9
8
7
6
5
4
3
2
1
0
8
6
4
2
0
3.5
0.3
0
f
= 1 MHz
Fig. 9. Forward Voltage Drop of Intrinsic Diode
5
4.0
0.4
10
0.5
4.5
Fig. 7. Input Admittance
Fig. 11. Capacitance
15
T
J
= 125ºC
0.6
5.0
V
V
V
DS
GS
SD
- Volts
20
- Volts
- Volts
T
0.7
J
5.5
= 125ºC
- 40ºC
25
25ºC
C iss
C oss
C rss
0.8
6.0
30
T
J
= 25ºC
0.9
6.5
35
1.0
7.0
40
0.01
100
0.1
10
1
10
12
10
9
8
7
6
5
4
3
2
1
0
10
8
6
4
2
0
0
0
T
T
Single Pulse
V
I
I
J
C
D
G
DS
= 150ºC
= 3A
= 10mA
= 25ºC
R
= 750V
1
Fig. 12. Forward-Bias Safe Operating Area
DS(on)
10
Limit
2
20
Fig. 8. Transconductance
100
3
Fig. 10. Gate Charge
Q
G
V
30
- NanoCoulombs
I
DS
D
4
- Amperes
- Volts
5
40
T
J
IXTJ6N150
= - 40ºC
1,000
25ºC
125ºC
6
50
25µs
100µs
1ms
10ms
100ms
DC
7
60
8
10,000
70
9