IXTK20N150 IXYS, IXTK20N150 Datasheet - Page 3

• Manufacturer Part Number: IXTK20N150
• Description: High Voltage Power MOSFETs (>1200V)
• Manufacturer: IXYS

Specifications of IXTK20N150

• Vdss, Max, (v): 1500
• Id(cont), Tc=25°c, (a): 20
• Rds(on), Max, Tj=25°c, (?): 1.0
• Ciss, Typ, (pf): 7800
• Qg, Typ, (nc): 215
• Trr, Typ, (ns): 1100
• Pd, (w): 1250
• Rthjc, Max, (k/w): 0.10
• Package Style: TO-264

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3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
30
25
20
15
10
22
20
18
16
14
12
10
5
0
8
6
4
2
0
-50
-50
0
V
GS
= 10V
Fig. 3. R
-25
-25
Fig. 1. Output Characteristics @ T
5
Fig. 5. Maximum Drain Current vs.
0
0
DS(on)
Junction Temperature
10
T
Case Temperature
Normalized to I
T
C
25
25
J
- Degrees Centigrade
- Degrees Centigrade
V
DS
- Volts
15
50
50
75
75
I
D
D
= 10A Value vs.
= 20A
20
V
GS
100
100
J
= 10V
= 25ºC
5V
4V
6V
I
D
25
= 10A
125
125
150
150
30
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
16
14
12
10
28
24
20
16
12
8
6
4
2
0
8
4
0
3.0
0
0
V
GS
Fig. 4. R
= 10V
Fig. 2. Output Characteristics @ T
4
3.5
5
DS(on)
8
10
Fig. 6. Input Admittance
4.0
Normalized to I
V
V
Drain Current
DS
GS
12
I
D
15
- Volts
- Amperes
- Volts
T
J
4.5
= 125ºC
T
16
J
= 125ºC
20
D
25ºC
= 10A Value vs.
5.0
T
IXTK20N150
IXTX20N150
J
= 25ºC
20
J
V
GS
= 125ºC
25
= 10V
- 40ºC
6V
5.5
5V
4V
24
30
6.0
28