IXTF1N250 IXYS, IXTF1N250 Datasheet - Page 4

• Manufacturer Part Number: IXTF1N250
• Description: High Voltage Power MOSFETs (>1200V)
• Manufacturer: IXYS

Specifications of IXTF1N250

• Vdss, Max, (v): 2500
• Id(cont), Tc=25°c, (a): 1
• Rds(on), Max, Tj=25°c, (?): 40
• Ciss, Typ, (pf): 1660
• Qg, Typ, (nc): 41
• Trr, Typ, (ns): 2.5
• Pd, (w): 110
• Rthjc, Max, (k/w): 1.13
• Package Style: ISOPLUS i4-Pak

IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.
10.00
3.0
2.5
2.0
1.5
1.0
0.5
0.0
3.00
1.00
0.10
0.01
10
9
8
7
6
5
4
3
2
1
0
0.0001
0.0
0
V
I
I
D
G
DS
0.1
= 500mA
= 10mA
= 600V
5
0.2
10
Fig. 7. Transconductance
0.3
15
Q
Fig. 9. Gate Charge
G
- NanoCoulombs
I
0.4
D
- Amperes
0.001
20
0.5
25
0.6
30
Fig. 11. Maximum Transient Thermal Impedance
Fig. 11. Maximum Transient Thermal Impedance
0.7
T
J
= - 40ºC
125ºC
35
0.8
25ºC
0.01
40
0.9
Pulse Width - Seconds
1.0
45
yufgfuy
10,000
1,000
100
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
0.3
0
f
= 1MHz
0.1
5
0.4
Fig. 8. Forward Voltage Drop of
10
Fig. 10. Capacitance
0.5
C rss
15
Intrinsic Diode
V
V
SD
DS
C oss
T
- Volts
- Volts
J
= 125ºC
0.6
20
C iss
1
IXTF1N250
25
0.7
30
IXYS REF: T_1N250 (5P)12-17-09-B
0.8
T
J
35
= 25ºC
10
0.9
40