IXFN44N80Q3 IXYS, IXFN44N80Q3 Datasheet - Page 4

• Manufacturer Part Number: IXFN44N80Q3
• Description: Q3-Class HiPerFETs
• Manufacturer: IXYS

Specifications of IXFN44N80Q3

• Vdss, Max, (v): 800
• Id(cont), Tc=25°c, (a): 37
• Rds(on), Max, Tj=25°c, (?): 0.19
• Ciss, Typ, (pf): 9840
• Qg, Typ, (nc): 185
• Trr, Typ, (ns): -
• Trr, Max, (ns): 300
• Pd, (w): 780
• Rthjc, Max, (ºc/w): 0.10
• Package Style: SOT-227B

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
120
100
100
80
60
40
20
60
50
40
30
20
10
10
0
0
0.3
5
0
f
= 1 MHz
0.4
5.5
Fig. 9. Forward Voltage Drop of Intrinsic Diode
5
0.5
6
10
0.6
Fig. 7. Input Admittance
6.5
Fig. 11. Capacitance
T
J
15
= 125ºC
T
0.7
J
= 125ºC
V
V
V
7
SD
DS
GS
0.8
- Volts
20
- Volts
- Volts
7.5
0.9
25
25ºC
T
J
C iss
C oss
C rss
8
= 25ºC
1.0
30
8.5
1.1
- 40ºC
35
1.2
9
1.3
9.5
40
1000
100
0.1
10
1
80
70
60
50
40
30
20
10
16
14
12
10
10
0
8
6
4
2
0
0
0
T
T
Single Pulse
J
C
= 150ºC
V
I
I
= 25ºC
D
G
DS
= 22A
= 10mA
R
= 400V
10
Fig. 12. Forward-Bias Safe Operating Area
DS(on)
50
Limit
20
Fig. 8. Transconductance
Fig. 10. Gate Charge
100
Q
G
V
- NanoCoulombs
30
I
D
DS
- Amperes
100
- Volts
IXFN44N80Q3
150
40
T
50
J
200
= - 40ºC
125ºC
25ºC
60
250
25µs
250µs
1ms
1,000
70