IXFN44N100Q3 IXYS, IXFN44N100Q3 Datasheet

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IXFN44N100Q3

Manufacturer Part Number
IXFN44N100Q3
Description
Q3-Class HiPerFETs
Manufacturer
IXYS
Datasheet

Specifications of IXFN44N100Q3

Vdss, Max, (v)
1000
Id(cont), Tc=25°c, (a)
38
Rds(on), Max, Tj=25°c, (?)
0.22
Ciss, Typ, (pf)
13600
Qg, Typ, (nc)
264
Trr, Typ, (ns)
-
Trr, Max, (ns)
300
Pd, (w)
960
Rthjc, Max, (ºc/w)
0.13
Package Style
SOT-227
HiperFET
Power MOSFET
Q3-Class
N-Channel Enhancement Mode
Fast Intrinsic Rectifier
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
V
M
Weight
Symbol
(T
BV
V
I
I
R
© 2011 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
DSS
DGR
GSS
GSM
AS
D
ISOL
GS(th)
DS(on)
d
J
DSS
= 25°C Unless Otherwise Specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
50/60 Hz, RMS, t = 1minute
I
Mounting Torque for Base Plate
Terminal Connection Torque
V
V
V
V
V
Test Conditions
S
ISOL
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
TM
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
≤ 1mA,
= 0V, I
= V
= ±30V, V
= V
= 10V, I
DM
, V
GS
DSS
, I
DD
D
, V
D
D
= 3mA
≤ V
= 8mA
= 22A, Note 1
GS
DS
= 0V
t = 1s
DSS
= 0V
, T
J
GS
≤ 150°C
= 1MΩ
T
Advance Technical Information
J
= 125°C
IXFN44N100Q3
JM
1000
3.5
Min.
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
1.3/11.5
1.5/13
1000
1000
2500
3000
Typ.
±30
±40
110
960
150
38
44
50
30
4
±200 nA
Nm/lb.in.
Nm/lb.in.
Max.
220 mΩ
6.5
50 μA
3 mA
V/ns
V~
V~
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
J
V
I
R
t
miniBLOC
G = Gate
S = Source
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
(Gate Return) Terminal.
Features
Advantages
Applications
D25
rr
International Standard Package
Low
miniBLOC with Aluminum Nitride
Isolation
Low Package Inductance
Fast Intrinsic Rectifier
Low R
High Power Density
Easy to Mount
Space Savings
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
Temperature and Lighting Controls
DS(on)
DSS
Intrinsic Gate Resistance
E153432
DS(on)
≤ ≤ ≤ ≤ ≤
=
=
≤ ≤ ≤ ≤ ≤
G
and Q
D = Drain
S
220mΩ Ω Ω Ω Ω
G
38A
1000V
300ns
D
DS100306(03/11)
S

Related parts for IXFN44N100Q3

IXFN44N100Q3 Summary of contents

Page 1

... GSS DSS DS DSS 10V 22A, Note 1 DS(on © 2011 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXFN44N100Q3 Maximum Ratings 1000 = 1MΩ 1000 GS ±30 ±40 38 110 ≤ 150° 960 -55 ... +150 150 -55 ... +150 2500 3000 1 ...

Page 2

... I = 22A 76 DSS D 110 0.05 Characteristic Values Min. Typ. JM 2.1 16.2 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFN44N100Q3 SOT-227B (IXFN) Outline Max Ω (M4 screws (4x) supplied 0.13 °C/W °C/W Max 176 A 1.4 V 300 ns μ ...

Page 3

... Value vs 125º 25º IXFN44N100Q3 Fig. 2. Extended Output Characteristics @ 10V Volts DS Fig Normalized to I DS(on) D Junction Temperature V = 10V GS -50 - Degrees Centigrade J Fig ...

Page 4

... T = 25º 0.9 1.0 1.1 1.2 1.3 1000 C iss 100 C oss rss 0 IXFN44N100Q3 Fig. 8. Transconductance 40ºC J 25º Amperes D Fig. 10. Gate Charge V = 500V 22A 10mA 120 160 Q - NanoCoulombs G Fig. 12. Forward-Bias Safe Operating Area ...

Page 5

... IXYS CORPORATION, All Rights Reserved Fig. 13. Maximum Transient Thermal Impedance 0.01 0.1 Pulse Width - Seconds IXFN44N100Q3 1 10 IXYS REF: F_44N100Q3(Q9)03-04-11 ...

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