IXFN44N100Q3 IXYS, IXFN44N100Q3 Datasheet - Page 4

• Manufacturer Part Number: IXFN44N100Q3
• Description: Q3-Class HiPerFETs
• Manufacturer: IXYS

Specifications of IXFN44N100Q3

• Vdss, Max, (v): 1000
• Id(cont), Tc=25°c, (a): 38
• Rds(on), Max, Tj=25°c, (?): 0.22
• Ciss, Typ, (pf): 13600
• Qg, Typ, (nc): 264
• Trr, Typ, (ns): -
• Trr, Max, (ns): 300
• Pd, (w): 960
• Rthjc, Max, (ºc/w): 0.13
• Package Style: SOT-227

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
140
120
100
100
70
60
50
40
30
20
10
80
60
40
20
10
0
0
4.5
0.3
0
f
0.4
= 1 MHz
5.0
Fig. 9. Forward Voltage Drop of Intrinsic Diode
5
0.5
5.5
10
0.6
Fig. 7. Input Admittance
6.0
Fig. 11. Capacitance
15
0.7
T
T
J
V
6.5
V
V
J
= 125ºC
DS
SD
GS
= 125ºC
0.8
20
- Volts
- Volts
- Volts
7.0
0.9
25
T
7.5
25ºC
J
C oss
C rss
1.0
C iss
= 25ºC
30
8.0
1.1
- 40ºC
35
8.5
1.2
9.0
1.3
40
1000
100
0.1
10
1
80
70
60
50
40
30
20
10
10
10
0
9
8
7
6
5
4
3
2
1
0
0
0
T
T
Single Pulse
V
I
I
J
C
D
G
DS
= 150ºC
= 25ºC
= 22A
= 10mA
Fig. 12. Forward-Bias Safe Operating Area
= 500V
10
40
R
DS(on)
Limit
80
20
Fig. 8. Transconductance
Fig. 10. Gate Charge
Q
G
120
- NanoCoulombs
V
30
I
D
IXFN44N100Q3
DS
- Amperes
100
- Volts
T
160
J
40
= - 40ºC
25ºC
125ºC
1ms
200
50
240
60
250µs
1,000
280
70