MMIX1F40N110P IXYS, MMIX1F40N110P Datasheet

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MMIX1F40N110P

Manufacturer Part Number
MMIX1F40N110P
Description
Manufacturer
IXYS
Datasheet

Specifications of MMIX1F40N110P

Vdss, Max, (v)
1100
Id(cont), Tc=25°c, (a)
24
Rds(on), Max, Tj=25°c, (?)
0.290
Ciss, Typ, (pf)
19000
Qg, Typ, (nc)
310
Trr, Typ, (ns)
-
Trr, Max, (ns)
300
Pd, (w)
500
Rthjc, Max, (ºc/w)
0.25
Polar
Power MOSFET
(Electrically Isolated Tab)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
T
V
F
Weight
Symbol
(T
BV
V
I
I
R
© 2012 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
C
DSS
DGR
GSS
GSM
AS
D
ISOL
GS(th)
DS(on)
J
DSS
= 25°C Unless Otherwise Specified)
TM
HiperFET
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
50/60 Hz, 1 Minute
Mounting Force
V
V
V
V
V
Test Conditions
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0V, I
= V
= ±30V, V
= V
= 10V, I
DM
DSS
, V
GS
, I
, V
DD
D
D
D
= 3mA
≤ V
GS
= 1mA
= 20A, Note 1
DS
= 0V
DSS
= 0V
TM
, T
J
GS
≤ 150°C
= 1MΩ
T
Advance Technical Information
J
= 125°C
MMIX1F40N110P
JM
50..200 / 11..45
1100
3.5
Min.
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
1100
1100
2500
Typ.
±30
±40
100
500
150
300
260
24
20
15
8
2
±200 nA
Max.
290 mΩ
6.5
50 μA
3 mA
N/lb.
V/ns
V~
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
J
V
I
R
t
G = Gate
S = Source
FFeatures
Advantages
Applications
D25
rr
-
-
-
G
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Substrate
Low
Low Package Inductance
Fast Intrinsic Rectifier
Low R
High Power Density
Easy to Mount
Space Savings
Switch-Mode and Resonant-Mode
Power Supplies
Pulse Power Applications
Discharge Circuits in Lasers Pulsers,
Spark Igniters, RF Generators
DC-DC converters
DC-AC inverters
DS(on)
DSS
Excellent Thermal Transfer
Increased Temperature and Power
Cycling Capability
High Isolation Voltage
Intrinsic Gate Resistance
S
Isolated Tab
S
DS(on)
≤ ≤ ≤ ≤ ≤
=
=
≤ ≤ ≤ ≤ ≤
G
and Q
D = Drain
290mΩ Ω Ω Ω Ω
G
24A
1100V
300ns
DS100431(01/12)
(2500V~)
D
D

Related parts for MMIX1F40N110P

MMIX1F40N110P Summary of contents

Page 1

... GSS DSS DS DSS 10V 20A, Note 1 DS(on © 2012 IXYS CORPORATION, All Rights Reserved Advance Technical Information MMIX1F40N110P Maximum Ratings 1100 = 1MΩ 1100 GS ±30 ±40 24 100 ≤ 150° 500 -55 ... +150 150 -55 ... +150 300 260 2500 50 ...

Page 2

... D 110 54 310 , I = 20A 95 DSS D 142 0.05 Characteristic Values Min. Typ. JM 2.2 16.0 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 MMIX1F40N110P Max Ω 0.25 °C/W °C/W Max 160 A 1.5 V 300 ns μC A 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 ...

Page 3

... Value vs 125º 25º MMIX1F40N110P Fig. 2. Extended Output Characteristics @ Volts DS Fig Normalized to I DS(on) Junction Temperature V = 10V GS -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. ...

Page 4

... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. = 125ºC J 25ºC - 40ºC 7.5 8.0 8.5 9 25ºC J 0.8 0.9 1.0 1.1 1.2 1.3 1000 100 C iss C oss 0.1 C rss 0. MMIX1F40N110P Fig. 8. Transconductance Amperes D Fig. 10. Gate Charge 550V 20A 10mA ...

Page 5

... IXYS CORPORATION, All Rights Reserved Fig. 13. Maximum Transient Thermal Impedance Fig. 13. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds MMIX1F40N110P 0.1 1 IXYS REF: F_40N110P(97)12-15-11-A 10 ...

Page 6

... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. MMIX1F40N110P PIN Gate 5-12 = Source 13-24 = Drain ...

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