MMIX1F40N110P IXYS, MMIX1F40N110P Datasheet - Page 4

• Manufacturer Part Number: MMIX1F40N110P
• Manufacturer: IXYS

Specifications of MMIX1F40N110P

• Vdss, Max, (v): 1100
• Id(cont), Tc=25°c, (a): 24
• Rds(on), Max, Tj=25°c, (?): 0.290
• Ciss, Typ, (pf): 19000
• Qg, Typ, (nc): 310
• Trr, Typ, (ns): -
• Trr, Max, (ns): 300
• Pd, (w): 500
• Rthjc, Max, (ºc/w): 0.25

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
120
100
100
80
60
40
20
10
45
40
35
30
25
20
15
10
0
5
0
0.2
5.0
0
f
0.3
= 1 MHz
Fig. 9. Forward Voltage Drop of Intrinsic Diode
5.5
5
0.4
6.0
10
0.5
Fig. 7. Input Admittance
Fig. 11. Capacitance
0.6
6.5
15
V
V
V
T
0.7
DS
J
SD
GS
= 125ºC
T
7.0
20
- Volts
- Volts
- Volts
J
= 125ºC
0.8
7.5
25
0.9
C oss
C rss
25ºC
T
C iss
J
1.0
= 25ºC
8.0
30
1.1
- 40ºC
8.5
35
1.2
1.3
9.0
40
1000
0.01
100
0.1
10
1
60
50
40
30
20
10
16
14
12
10
0
8
6
4
2
0
10
0
0
V
I
I
R
D
G
DS
DS(on)
50
5
= 20A
= 10mA
= 550V
Fig. 12. Forward-Bias Safe Operating Area
Limit
100
10
150
Fig. 8. Transconductance
15
100
Fig. 10. Gate Charge
Q
MMIX1F40N110P
200
G
20
- NanoCoulombs
V
I
D
DS
- Amperes
- Volts
250
25
300
30
1,000
125ºC
T
J
350
= - 40ºC
25ºC
35
25µs
100µs
1ms
10ms
100ms
DC
400
40
T
T
Single Pulse
J
C
= 150ºC
= 25ºC
450
45
10,000
500
50