CPC3703 IXYS, CPC3703 Datasheet

CPC3703

Manufacturer Part Number

CPC3703

Description

Depletion Mode MOSFETs

Manufacturer

IXYS

Datasheet

1.CPC3703.pdf (4 pages)

Specifications of CPC3703

Vds, Max, (v)

250(min)

Id(on), Min, (a)

0.3

Rds(on), Max, (?)

Vgs(off), Max, (v)

-3.9

Ciss, Typ, (pf)

327

Crss, Typ, (pf)

Qg, Typ, (nc)

Pd, (w)

Rthjc, Max, (ºc/w)

Package Style

SOT-89

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•

DS-CPC3703-R03

Features

•

Applications

Package Pinout

Ignition Modules

Normally-on Switches

Solid State Relays

Converters

Telecommunications

Power Supply

Depletion mode device offers low R

temperatures

Low on resistance 4 ohms max. at 25ºC

High input impedance

High breakdown voltage 250V

Low V

Small package size SOT89

250V

DSX

DGX

GS(off)

2002/95/EC

RoHS

voltage -1.6 to -3.9V

(max)

DS(ON)

(SOT89)

4Ω

DSS

360mA

(min)

DS(ON)

Package

SOT-89

at cold

www.clare.com

Circuit Symbol

Description

The CPC3703 is an N-channel, depletion mode, field

effect transistor (FET) that utilizes Clare’s proprietary

third-generation vertical DMOS process. The

third-generation process realizes world class, high

voltage MOSFET performance in an economical

silicon gate process. Our vertical DMOS process

yields a robust device, with high input impedance,

for use in high-power applications. The CPC3703

is a highly reliable FET device that has been used

extensively in Clare’s Solid State Relays for industrial

and telecommunications applications.

This device excels in power applications that require

low drain-source resistance, particularly in cold

environments such as automotive ignition modules.

The CPC3703 offers a low, 4Ω maximum, on-state

resistance at 25ºC.

The CPC3703 has a minimum breakdown voltage of

250V, and is available in an SOT89 package. As with

all MOS devices, the FET structure prevents thermal

runaway and thermal-induced secondary breakdown.

Ordering Information

Part #

CPC3703C

CPC3703CTR

N-Channel Depletion-Mode

Description

SOT89 (100/Tube)

SOT89 (2000/Reel)

Vertical DMOS FETs

CPC3703

Related parts for CPC3703

CPC3703 Summary of contents

Page 1

... The CPC3703 offers a low, 4Ω maximum, on-state resistance at 25ºC. The CPC3703 has a minimum breakdown voltage of 250V, and is available in an SOT89 package. As with all MOS devices, the FET structure prevents thermal runaway and thermal-induced secondary breakdown. ...

Page 2

... CPC3703 Absolute Maximum Ratings Parameter Drain-to-Source Voltage Gate-to-Source Voltage 1 Total Package Dissipation Operational Temperature Storage Temperature 1 Mounted on 1"x1" FR4 board. Thermal Characteristics Package I (continuous) I (pulsed SOT-89 360mA 600mA Electrical Characteristics Parameter Drain-to-Source Breakdown Voltage Gate-to-Source Off Voltage ...

Page 3

... I (mA) D On-Resistance vs. Drain Current (V =0V) GS 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 I (A) D www.clare.com CPC3703 V & R Vs. Temperature GS(OFF) ON 5.5 V =10V DS 5.0 I =1mA D V =0V 4 =200mA ON D 4.0 3.5 3.0 V GS(OFF) 2 100 -1.5 Temperature (ºC) Maximum Rated Safe Operating Area at 25º ...

Page 4

... Recommended PCB Land Pattern 1.90 (0.075) 45º 2.70 5.00 (0.107) (0.197) 1.40 50º (0.055) 1.90 (0.074) 0.60 (0.024) TYP 3 Dimensions mm (inches) W=12.00 ± 0.30 (0.472 ± 0.012) B =4.52 ± 0.10 0 (0.178 ± 0.004) A =4.91 ± 0.10 0 (0.193 ± 0.004) Dimensions mm (inches) Specification: DS-CPC3703-R03 ©Copyright 2009, Clare, Inc. All rights reserved. Printed in USA. 10/13/09 ...

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