CPC3703 IXYS, CPC3703 Datasheet - Page 2

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CPC3703

Manufacturer Part Number
CPC3703
Description
Depletion Mode MOSFETs
Manufacturer
IXYS
Datasheet

Specifications of CPC3703

Vds, Max, (v)
250(min)
Id(on), Min, (a)
0.3
Rds(on), Max, (?)
4
Vgs(off), Max, (v)
-3.9
Ciss, Typ, (pf)
327
Crss, Typ, (pf)
-
Qg, Typ, (nc)
-
Pd, (w)
-
Rthjc, Max, (ºc/w)
15
Package Style
SOT-89
CPC3703
1
Absolute Maximum Ratings
Thermal Characteristics
Electrical Characteristics
Switching Waveform & Test Circuit
2
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Total Package Dissipation
Operational Temperature
Storage Temperature
Parameter
Drain-to-Source Breakdown Voltage
Gate-to-Source Off Voltage
Change in V
Gate Body Leakage Current
Drain-to-Source Leakage Current
Saturated Drain-to-Source Current
Static Drain-to-Source On-State Resistance
Change in R
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Source-Drain Diode Voltage Drop
Package
SOT-89
Mounted on 1"x1" FR4 board.
OUTPUT
INPUT
GS(off)
DS(on)
-10V
V
0V
0V
DD
with Temperature
with Temperature
I
D
10%
(continuous)
360mA
1
t
d(ON)
10%
t
(ON)
90%
t
r
I
D
(pulsed)
600mA
-55 to +125
-55 to +125
Ratings
250
±20
1.6
90%
t
dR
dV
d(OFF)
Symbol
t
V
R
BV
GS(off)
(OFF)
DS(on)
C
I
C
C
t
t
I
I
GS(off)
G
V
D(off)
DS(on)
GSS
d(on)
d(off)
DSS
OSS
RSS
ISS
t
t
SD
DSX
FS
r
f
/dT
/dT
t
90%
F
Units
ºC
ºC
W
V
V
10%
www.clare.com
Power Dissipation
@T
V
GS
1.6W
A
V
=25ºC
GS
= -5V, V
I
V
D
V
V
Absolute Maximum Ratings are stress ratings. Stresses in
excess of these ratings can cause permanent damage to
the device. Functional operation of the device at conditions
beyond those indicated in the operational sections of this
data sheet is not implied.
V
= -5V, V
= 100mA, V
GS
V
V
V
GS
GS
V
GS
GS
DS
DS
Conditions
= -5V, I
GS
= -5V, I
= 0V, I
=±20V, V
R
= 15V, I
= 15V, I
= 0V, V
I
V
V
D
V
= 0V to -10V
f= 1MHz
GEN
DS
= 150mA
DS
DD
GS
DS
=200V, T
= 25V
= 25V
= -5V
= 50Ω
GENERATOR
SD
D
=Max Rating
D
=200mA
DS
=100µA
D
D
=150mA
DS
PULSE
=1mA
=1mA
DS
=15V
= 10V
=0V
A
INPUT
R
=125ºC
gen
ºC/W
θ
15
jc
Min
250
-1.6
300
225
-
-
-
-
-
-
-
-
-
Typ
327
0.6
51
27
23
17
70
360mA
8
-
-
-
-
-
-
-
-
-
-
I
V
DR
DD
R
L
Max
-3.9
100
350
4.5
1.1
1.8
65
35
35
20
25
80
D.U.T.
1
1
4
-
-
-
OUTPUT
600mA
I
DRM
Units
mV/ºC
%/ºC
m
mA
mA
nA
µA
pF
ns
Ω
V
V
V
Ω
R03

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