CPC3730 IXYS, CPC3730 Datasheet
CPC3730
Specifications of CPC3730
Related parts for CPC3730
CPC3730 Summary of contents
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... MOSFET performance in an economical silicon gate process. Our vertical DMOS process yields a robust device, with high input impedance, for use in high power applications. The CPC3730 is a highly reliable FET device that has been used extensively in Clare’s solid state relays for industrial and telecommunications applications ...
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... D =140mA - - D = 10V 150 - DS 100 - 150mA - 0.6 SD =25ºC ºC 140mA V DD PULSE GENERATOR R gen INPUT CPC3730 Max Units - V P -3.9 V 4.5 mV/ºC 100 nA 30 1.1 %/ºC 200 100 1 DRM 600mA R L OUTPUT D ...
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... Temperature (ºC) Capacitance vs. Drain-Source Voltage (V =0V) GS 160 140 V ISS 120 100 OSS RSS 0 0.08 0.12 0.16 0 (A) D PRELIMINARY CPC3730 V vs. Temperature GS(off) (V =10V, I =1mA -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -3.0 -1.0 - Temperature (ºC) Maximum Rated Safe Operating Area at 25ºC 1.0 0.1 0.001 0.0001 140 0 ...
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... Chlorine-based or Fluorine-based solvents or fluxes should not be used. Cleaning methods that employ ultrasonic energy should not be used RoHS 3 2002/95/EC 4 Moisture Sensitivity Level (MSL) Rating MSL 1 Maximum Temperature x Time 260ºC for 30 seconds PRELIMINARY CPC3730 R00C ...
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... CPC3730C 1.626 / 1.829 (0.064 / 0.072) 0.889 / 1.194 (0.035 / 0.047) 0.432 / 0.559 (0.017 / 0.022) 4.394 / 4.597 (0.173 / 0.181) (0.056 / 0.062) CPC3730C Tape & Reel 177.8 Dia (7.00 Dia) Top Cover Tape Thickness 0.102 Max (0.004 Max) Embossed Carrier Embossment For additional information please visit our website at: www.clare.com Clare, Inc. makes no representations or warranties with respect to the accuracy or completeness of the contents of this publication and reserves the right to make changes to specifications and product descriptions at any time without notice. Neither circuit patent licenses nor indemnity are expressed or implied. Except as set forth in Clare’ ...