CPC3730 IXYS, CPC3730 Datasheet - Page 3

• Manufacturer Part Number: CPC3730
• Description: Depletion Mode MOSFETs
• Manufacturer: IXYS

Specifications of CPC3730

• Vds, Max, (v): 350(min)
• Id(on), Min, (a): 0.2
• Rds(on), Max, (?): 30
• Vgs(off), Max, (v): -3.9
• Ciss, Typ, (pf): 100
• Crss, Typ, (pf): -
• Qg, Typ, (nc): -
• Pd, (w): -
• Rthjc, Max, (ºc/w): 15
• Package Style: SOT-89

*The Performance data shown in the graphs above is typical of device performance. For guaranteed parameters not indicated in the written specifi cations, please
contact our application department.
R00C
150.0
135.0
120.0
105.0
42.0
36.0
30.0
24.0
18.0
12.0
90.0
75.0
60.0
45.0
30.0
15.0
6.0
0
0
-40
0
1
Output Characteristics
R
0
(V
ON
Temperature (ºC)
GS
2
vs. Temperature
=0V, I
(T
V
A
DS
=25ºC)
40
3
D
(V)
50
45
40
35
30
25
20
15
10
=80mA)
5
0
0.00
4
On-Resistance vs. Drain Current
80
0.04
V
V
V
V
GS
GS
GS
GS
5
=0.0
=-1.0
=-1.5
=-2.0
120
0.08
6
(V
I
D
GS
(A)
=0V)
140.0
120.0
100.0
80.0
60.0
40.0
20.0
0.12
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
PERFORMANCE DATA*
0
0
-3.0
0
0.16
20
Transfer Characteristics
Power Dissipation vs.
Ambient Temperature
PRELIMINARY
-2.5
40
0.2
Temperature (ºC)
-40ºC
60
(V
V
DS
+25ºC
GS
-2.0
=5V)
160
140
120
100
80
(V)
80
60
40
20
0
+125ºC
0
Capacitance vs. Drain-Source Voltage
100
V
RSS
-1.5
V
ISS
V
OSS
120
10
-1.0
140
(V
V
GS
DS
20
0.0001
=-5V)
0.001
(V)
-0.4
-0.8
-1.2
-1.6
-2.0
-2.4
-3.0
1.0
0.1
0
-40
0
Maximum Rated Safe Operating Area
30
V
0
GS(off)
(V
10
40
Temperature (ºC)
DS
=10V, I
vs. Temperature
at 25ºC
V
40
DS
(V)
D
=1mA)
100
80
CPC3730
1000
120
3