MMIX1T600N04T2 IXYS, MMIX1T600N04T2 Datasheet - Page 4

• Manufacturer Part Number: MMIX1T600N04T2
• Description: TrenchT2 MOSFETs
• Manufacturer: IXYS

Specifications of MMIX1T600N04T2

• Vdss, Max, (v): 40
• Id(cont), Tc=25°c, (a): 600
• Rds(on), Max, Tj=25°c, (?): 0.0013
• Ciss, Typ, (pf): 40000
• Qg, Typ, (nc): 590
• Trr, Typ, (ns): 100
• Trr, Max, (ns): -
• Pd, (w): 830
• Rthjc, Max, (k/w): 0.18

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
450
400
350
300
250
200
150
100
100
50
10
10
0
9
8
7
6
5
4
3
2
1
0
1
0
0
1
V
I
I
T
T
Single Pulse
D
G
DS
J
C
= 300A
= 10mA
= 175ºC
= 25ºC
R
= 20V
50
DS(on)
Fig. 11. Forward-Bias Safe Operating Area
100
Limit
100
Fig. 7. Transconductance
200
Fig. 9. Gate Charge
Q
G
150
I
- NanoCoulombs
D
V
- Amperes
DS
300
10
- Volts
200
T
J
400
= - 40ºC
250
DC
25ºC
150ºC
500
100µs
10ms
100ms
1ms
300
600
350
100
0.0001
0.001
0.01
350
300
250
200
150
100
100
0.1
0.1
0.00001
50
10
1
0
1
0.2
0
f
Fig. 12. Maximum Transient Thermal Impedance
= 1 MHz
0.3
Fig. 8. Forward Voltage Drop of Intrinsic Diode
5
0.0001
0.4
10
T
0.5
J
0.001
= 150ºC
MMIX1T600N04T2
Fig. 10. Capacitance
Pulse Width - Seconds
15
0.6
V
V
SD
DS
0.01
0.7
- Volts
20
- Volts
0.8
25
C iss
C oss
0.1
C rss
T
J
0.9
= 25ºC
30
1.0
1
35
1.1
10
1.2
40