MMIX1T600N04T2 IXYS, MMIX1T600N04T2 Datasheet - Page 5

• Manufacturer Part Number: MMIX1T600N04T2
• Description: TrenchT2 MOSFETs
• Manufacturer: IXYS

Specifications of MMIX1T600N04T2

• Vdss, Max, (v): 40
• Id(cont), Tc=25°c, (a): 600
• Rds(on), Max, Tj=25°c, (?): 0.0013
• Ciss, Typ, (pf): 40000
• Qg, Typ, (nc): 590
• Trr, Typ, (ns): 100
• Trr, Max, (ns): -
• Pd, (w): 830
• Rthjc, Max, (k/w): 0.18

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600
500
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100
400
350
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150
100
90
80
70
60
50
40
30
20
10
50
0
0
0
25
40
1
R
V
t
T
V
DS
G
r
J
DS
35
Fig. 17. Resistive Turn-off Switching Times
Fig. 15. Resistive Turn-on Switching Times
= 1Ω , V
= 125ºC, V
2
60
= 20V
= 20V
Fig. 13. Resistive Turn-on Rise Time
45
3
GS
80
t
GS
= 10V
d(on)
= 10V
vs. Junction Temperature
55
I
vs. Gate Resistance
4
- - - -
D
vs. Drain Current
100
= 200A
T
J
- Degrees Centigrade
I
D
65
R
5
- Amperes
G
I
T
D
J
- Ohms
120
= 200A
= 125ºC, 25ºC
I
75
D
6
= 100A
140
R
V
t
85
f
G
DS
7
= 1Ω, V
= 20V
I
D
160
95
= 100A
GS
8
t
= 10V
d(off)
105
180
9
- - - -
115
200
10
140
120
100
80
60
40
20
200
180
160
140
120
100
80
60
40
125
800
700
600
500
400
300
200
100
100
400
350
300
250
200
150
100
90
80
70
60
50
40
30
20
10
50
0
0
0
40
25
1
T
V
t
R
V
t
R
V
I
f
J
DS
D
Fig. 16. Resistive Turn-off Switching Times
f
DS
G
DS
35
G
Fig. 18. Resistive Turn-off Switching Times
= 125ºC, V
2
= 100A
= 1Ω , V
= 1Ω, V
= 20V
60
= 20V
= 20V
45
Fig. 14. Resistive Turn-on Rise Time
3
GS
GS
GS
t
vs. Junction Temperature
80
t
d(off)
= 10V
= 10V
d(off)
= 10V
55
vs. Gate Resistance
T
4
- - - -
- - - -
J
- Degrees Centigrade
vs. Drain Current
MMIX1T600N04T2
100
65
R
5
G
I
D
- Ohms
75
- Amperes
120
6
85
I
D
140
7
= 200A, 100A
95
T
T
J
J
= 125ºC
= 25ºC
8
105
I
160
D
= 200A
115
9
180
125
10
160
150
140
130
120
110
100
90
80
800
700
600
500
400
300
200
100
0
200