IXTP60N10TM IXYS, IXTP60N10TM Datasheet
IXTP60N10TM
Specifications of IXTP60N10TM
Related parts for IXTP60N10TM
IXTP60N10TM Summary of contents
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... GSS DSS DS DSS 10V 25A, Notes 1, 2 DS(on © 2008 IXYS CORPORATION, All rights reserved Preliminary Technical Information IXTP60N10TM Maximum Ratings 100 = 1MΩ 100 GS ± 180 JM 10 500 60 -55 ... +175 175 -55 ... +175 300 260 1.13/10 2.5 Characteristic Values Min ...
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... Characteristic Values Min. Typ 3.8 112 Kelvin test contact location must be DS(on) 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTP60N10TM OVERMOLDED TO-220 W/ FORMED LEAD (IXTP...M) Max Terminals Gate 2.5 °C/W Max ...
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... Value 175º 25º 105 120 135 150 IXTP60N10TM Fig. 2. Extended Output Characteristics @ 25º Volts DS Fig Normalized to I DS(on) vs. Junction Temperature V = 10V 60A D -50 - ...
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... IXYS reserves the right to change limits, test conditions, and dimensions 6.0 6.5 7.0 7 25ºC J 1.0 1.1 1.2 1.3 1.4 10.00 C iss 1.00 C oss 0.10 C rss 0. 0.00001 IXTP60N10TM Fig. 8. Transconductance Amperes D Fig. 10. Gate Charge V = 50V 10A 10mA ...
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... V = 10V G GS 100 V = 50V 25º IXTP60N10TM Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 15Ω 10V 50V Amperes D Fig ...