IXTP60N10TM IXYS, IXTP60N10TM Datasheet - Page 4

• Manufacturer Part Number: IXTP60N10TM
• Description: Trench MOSFETs
• Manufacturer: IXYS

Specifications of IXTP60N10TM

• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 33
• Rds(on), Max, Tj=25°c, (?): 0.019
• Ciss, Typ, (pf): 2650
• Qg, Typ, (nc): 49
• Trr, Typ, (ns): 59
• Trr, Max, (ns): -
• Pd, (w): 60
• Rthjc, Max, (k/w): 2.5
• Package Style: OVERMOLEDED

IXYS reserves the right to change limits, test conditions, and dimensions.
10,000
1,000
100
180
160
140
120
100
10
90
80
70
60
50
40
30
20
10
80
60
40
20
0
0
4.0
0.4
0
f
0.5
= 1 MHz
5
4.5
Fig. 9. Forward Voltage Drop of
0.6
10
Fig. 7. Input Admittance
5.0
Fig. 11. Capacitance
0.7
T
J
Intrinsic Diode
= 150ºC
T
J
15
= 150ºC
V
0.8
V
V
GS
SD
- 40ºC
DS
5.5
25ºC
- Volts
- Volts
- Volts
0.9
20
6.0
1.0
T
25
J
= 25ºC
C iss
C oss
C rss
1.1
6.5
30
1.2
7.0
35
1.3
1.4
7.5
40
10.00
1.00
0.10
0.01
70
60
50
40
30
20
10
10
0
0.00001
9
8
7
6
5
4
3
2
1
0
0
0
V
I
I
10
5
D
G
0.0001
DS
= 10A
= 10mA
Fig. 12. Maximum Transient Thermal
= 50V
10
20
Fig. 8. Transconductance
0.001
15
Fig. 10. Gate Charge
Q
Pulse Width - Seconds
30
G
- NanoCoulombs
I
D
20
0.01
Impedance
- Amperes
40
IXTP60N10TM
25
50
0.1
30
IXYS REF: T_60N10T(2V)8-07-08-A
60
35
1
T
J
70
= - 40ºC
40
150ºC
25ºC
10
80
45
100
50
90