IXFP130N10T2 IXYS, IXFP130N10T2 Datasheet - Page 4

• Manufacturer Part Number: IXFP130N10T2
• Description: TrenchT2 HiperFETs
• Manufacturer: IXYS

Specifications of IXFP130N10T2

• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 130
• Rds(on), Max, Tj=25°c, (?): 0.0091
• Ciss, Typ, (pf): 6600
• Qg, Typ, (nc): 130
• Pd, (w): 360
• Rthjc, Max, (k/w): 0.42
• Package Style: TO-220

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
350
300
250
200
150
100
100
160
140
120
100
50
80
60
40
20
0
0
0.4
3.0
0
0.5
f
= 1 MHz
3.5
5
0.6
4.0
Fig. 9. Forward Voltage Drop of
10
0.7
T
J
Fig. 7. Input Admittance
= 150ºC
4.5
Fig. 11. Capacitance
0.8
T
15
J
Intrinsic Diode
= 125ºC
V
- 40ºC
GS
V
25ºC
5.0
V
0.9
SD
DS
- Volts
- Volts
20
- Volts
T
1.0
J
5.5
= 25ºC
25
1.1
C oss
C rss
6.0
C iss
1.2
30
6.5
1.3
35
7.0
1.4
1.5
7.5
40
1,000
100
100
90
80
70
60
50
40
30
20
10
10
10
0
9
8
7
6
5
4
3
2
1
0
1
0
0
1
V
I
I
T
T
Single Pulse
D
G
10
DS
J
C
R
= 65A
= 10mA
= 175ºC
DS(on)
= 25ºC
20
= 50V
20
Fig. 12. Forward-Bias Safe Operating Area
Limit
40
30
10ms
Fig. 8. Transconductance
40
60
Fig. 10. Gate Charge
Q
50
G
V
1ms
I
- NanoCoulombs
DS
D
80
- Amperes
60
- Volts
10
100ms
70
100
100µs
IXFA130N10T2
IXFP130N10T2
80
T
J
120
DC
= - 40ºC
90
25µs
25ºC
100
IXYS REF: F_130N10T2(V5)9-30-09-A
140
150ºC
110
160
120
130
180
100