IXXH75N60B3 IXYS, IXXH75N60B3 Datasheet
IXXH75N60B3
Specifications of IXXH75N60B3
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IXXH75N60B3 Summary of contents
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... CES CE CES GE = ±20V 0V, V GES 60A 15V, Note 1 CE(sat © 2011 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXXH75N60B3 Maximum Ratings 600 = 1MΩ 600 GE ±20 ±30 160 75 300 30 500 = 5Ω 150 G CM ≤ CES = 150° ...
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... CES 1.7 118 125 1 2.6 145 170 2.2 0.21 (clamp 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXXH75N60B3 TO-247 (IXXH) Outline Max Terminals Gate 3 - Emitter mJ Dim. Millimeter 160 ns Min. Max 4.7 A 2.2 2.1 mJ ...
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... T = 25ºC J 100 150A IXXH75N60B3 Fig. 2. Extended Output Characteristics @ 15V GE 14V 13V Volts CE Fig. 4. Dependence of V Junction Temperature V = 15V 150A 75A 37.5A C -50 - ...
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... C ies 120 100 80 C oes res 20 0 100 Fig. 11. Maximum Transient Thermal Impedance Fig. 11. Maximum Transient Thermal Impedance aasss 0.001 0.01 Pulse Width - Seconds IXXH75N60B3 Fig. 8. Gate Charge V = 300V 75A 10mA NanoCoulombs G Fig. 10. Reverse-Bias Safe Operating Area T = 150º ...
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... G GE 240 V = 400V CE 200 220 200 180 180 160 160 140 140 120 120 100 100 IXXH75N60B3 Fig. 13. Inductive Switching Energy Loss vs. Collector Current off on Ω 15V 400V 150º ...
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... 80A 40A 100 125 150 IXXH75N60B3 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current d(on Ω 15V 400V 150ºC, 25º ...